Gas barrier substrate

ABSTRACT

The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.

This application is a continuation of, claims priority to and thebenefit of U.S. patent application Ser. No. 10/810,541 filed on Mar. 26,2004, the entire contents of which are incorporated herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a gas barrier substrate having a highgas barrier property and a flatness, to be used for a display substratesuch as an organic electroluminescent (hereinafter it may abbreviated asorganic EL) device or the like.

2. Description of the Related Art

Conventionally, for example, as a supporting substrate for a displaysubstrate such as an organic EL display, those using a glass substrateare known. However, the glass substrates have shortcomings of heaviness,hardness and easily crackable. Then, recently, in order to solve theproblems of the glass substrates, a plastic substrate has been proposed.

However, although the plastic substrates are light-weight, flexible andhardly crackable, they have a poorer gas barrier property compared withthe glass substrates so that it has been difficult to maintain theperformance of the display device for a long time.

Moreover, for example, when a supporting substance is used for a displaydevice such as an organic EL device, the gas barrier property to oxygenor water vapor is required, because the light emission deteriorationoccur when a light emitting layer of the organic EL device contact witha water vapor or oxygen. Moreover, since the process under a hightemperature is necessary to form an organic EL device, the heatresistance is also required for the supporting substrate. Moreover, whenthe supporting substrate does not have enough flatness, a defect can begenerated in the gas barrier property due to a pin hole, a projection orthe like, or since the organic EL layer such as the light emitting layeris a thin film, the organic EL layer cannot be formed evenly due to apin hole, a projection or the like so that a dark spot is considered tobe generated in the organic EL display. Moreover, when the display isinstalled and used for a long time, the supporting substrate is requiredto be stable to the electric potential and the temperature rise. This isbecause a problem of the modulation of the light emission or the lightof the display can be generated when the supporting substrate isunstable to the electric potential or the temperature rise. In view ofthese points, a method of providing the properties to the plasticsubstrate has been required.

Therefore, conventionally, for providing the gas barrier property to aplastic substrate, the following proposal has been provided. Forexample, according to Japanese Patent Application Laid-Open (JP-A) No.7-164591, a high gas barrier property is achieved by providing aninorganic deposition film as the first layer on a substrate made of apolymer resin composition, and laminating, as the second layer, a gasbarrier property film produced by applying a coating agent containing,as the main agent, an aqueous solution including one or more kinds of analkoxide and/or a hydrolyzed product thereof, and a tin chloride, or awater/alcohol mixture solution, heating and drying.

Moreover, according to JP-A No. 7-268115, a high gas barrier property isachieved by providing an inorganic deposition film as the first layer ona substrate made of a polymer resin composition, and laminating, as thesecond layer, a gas barrier property film produced by applying a coatingagent containing, as the main agent, a mixture solution of one or morekinds of an alkoxide or a hydrolyzed product thereof, and an isocyanatecompound having at least two isocyanate groups in the molecule, heatingand drying.

Moreover, according to JP-A No. 11-222508, a gas barrier property isachieved by providing an inorganic deposition film made of a SiO₂ on asubstrate having the excellent heat resistance, mechanical strength, andin particular, shock resistance by including a component containing analicyclic hydrocarbon skeleton bis (meth)acrylate, a mercapto compound,and a monofunctional (meth)acrylate).

However, according to JP-A Nos. 7-164591, 7-268115, the application islimited to the packaging field such as the food and the medicalproducts. Furthermore, as to the gas barrier property, the water vaportransmission rate (hereinafter it is referred to also as the WVTR) isabout 0.1 g/m²/day, and the oxygen transmission rate (hereinafter it isreferred to also as the OTR) is about 0.3 cc/m²/day·atm, and thus it isinsufficient. Moreover, according to JP-A No. 11-222508, its applicationis in the display field, in particular, the liquid crystal displaypanel. Although the gas barrier property is achieved by providing aninorganic deposition film made of a SiO₂ on a substrate, the oxygentransmission rate remains at 1 cc/m²/day·atm so that it is notsufficient as the water proof property for preventing deterioration of,for example, the light emitting layer of the organic EL device.

Moreover, as to the surface flatness, it is not discussed in any of thepatent documents.

Furthermore, recently, when using a glass substrate as a thin film,improvement of the gas transmission rate is required in accordance withthe high precision of the organic EL display.

SUMMARY OF THE INVENTION

The present invention has been achieved in view of the above-mentionedproblems, and the main object thereof is to provide a gas barriersubstrate having a high gas barrier property and a good flatness withouta ruggedness, a pin hole or the like in the gas barrier layer.

In order to achieve the above-mentioned object, the present inventionprovides a gas barrier substrate having a base material, a planarizationlayer formed on the base material, and a gas barrier layer comprising adeposition film formed on the planarization layer.

According to the present invention, since the gas barrier layer isformed on the flattened surface of the planarization layer, the gasbarrier layer can be a dense layer having a high gas barrier propertywithout a ruggedness, a pin hole or the like. Moreover, since theplanarization layer is formed between the gas barrier layer and thetransparent base material, the adhesive property between the transparentbase material and the gas barrier layer can be improved so that a gasbarrier substrate having a high gas barrier property can be provided.Thereby, a high quality display without a dark spot can be formed byusing the gas barrier substrate of the present invention, for example,as a display substrate.

In the present invention, it is preferable that the planarization layerhas a cardo polymer. Since the cardo polymer in general has a highadhesive property with the gas barrier layer, the gas barrier layer canbe absorbed on the entirety of the planarization layer so that a gasbarrier substrate having a high gas barrier property with the gasbarrier layer formed more densely can be provided.

Moreover, according to the present invention, it is possible that thebase material is made of a heat resistant transparent resin having a 80ppm or less of coefficient of thermal expansion in the range from a roomtemperature to 150° C. and 85% or more of overall optical transmittance.Thereby, the gas barrier substrate of the present invention has the heatresistance to be used for the various applications such as a displaysubstrate, which is required to have the heat resistance like an organicEL device.

Furthermore, according to the present invention, it is possible that thebase material has a heat resistant transparent resin layer having a 80ppm or less of coefficient of thermal expansion in the range from a roomtemperature to 150° C. and 85% or more of overall optical transmittanceon the surface. Since the base material have the heat resistance owingto the transparent resin layer, the gas barrier substrate of the presentinvention can be used for the various applications.

Moreover, according to the present invention, it is preferable that theaverage surface roughness of the planarization layer is 6 nm or less,and the maximum height difference of surface (peak to valley) is 60 runor less. Thereby, a high quality gas barrier substrate having a highflatness without a ruggedness, a pin hole or the like in the gas barrierlayer formed on the planarization layer or in a layer formed on the gasbarrier substrate of the present invention or the like can be provided.

Furthermore, according to the present invention, it is preferable thatthe gas barrier layer is a deposition film comprising a transparentinorganic oxide film, a transparent inorganic oxide nitride film, atransparent inorganic nitride film or a transparent metal film. Thereby,the gas barrier property of the gas barrier layer can be made higher.

Moreover, according to the present invention, it is preferable that theoxygen transmission rate in the gas barrier substrate is 0.3cc/m²/day·atm or less and the water vapor transmission rate is 0.1g/m²/day or less. Since the oxygen transmission rate and the water vaportransmission rate of the gas barrier substrate of the present inventionare in the ranges, it can be used for a supporting substrate of, forexample, an organic EL device or the like having a member vulnerable tothe oxygen, the water vapor or the like.

Furthermore, according to the present invention, it is preferable thatthe average surface roughness of the gas barrier substrate is 6 nm orless, and the maximum height difference of surface (peak to valley) is60 nm or less. By the flatness in the surface of the gas barriersubstrate, it can be used for various applications such as a displaysubstrate for an organic EL device.

Moreover, in the above-mentioned invention, it is possible that a stressreleasing layer for releasing the stress applied on the base material isformed on the opposite surface where the gas barrier layer and theplanarization layer are formed. Thereby, the stress generated whenforming the gas barrier layer or the planarization layer can be reducedso that warpage in the gas barrier substrate can be prevented.

The present invention provides a gas barrier substrate having a basematerial, a gas barrier layer comprising a deposition film formed on thebase material, and a planarization layer having a cardo polymer, formedon the gas barrier layer.

According to the present invention, since the planarization layer has ahigh adhesive property to the gas barrier layer so that it can fill apin hole of the gas barrier layer or the like, thereby a gas barriersubstrate having a high gas barrier property can be provided. Moreover,since the planarization layer is formed on the surface of the gasbarrier substrate, a gas barrier substrate having a flat surface can beprovided so that a gas barrier substrate to be used for variousapplications such as an organic EL device can be provided.

In the above-mentioned invention, it is preferable that the gas barrierlayer is formed on the planarization layer. Thereby, the gas barrierproperty of the gas barrier substrate can be made higher.

Moreover, according to the present invention, it is possible that thebase material is made of a heat resistant transparent resin having 80ppm or less of coefficient of thermal expansion in the range from a roomtemperature to 150° C. and 85% or more of overall optical transmittance.Thereby, the gas barrier substrate of the present invention has the heatresistance to be used for the various applications such as a displaysubstrate, which is required to have the heat resistance like an organicEL device.

Furthermore, according to the present invention, it is possible that thebase material has a heat resistant transparent resin layer having 80 ppmor less of coefficient of thermal expansion in the range from a roomtemperature to 150° C. and 85% or more of overall optical transmittanceon the surface. Since the base material have the heat resistance owingto the transparent resin layer, the gas barrier substrate of the presentinvention can be used for the various applications.

Moreover, according to the present invention, it is preferable that theaverage surface roughness of the planarization layer is 6 nm or less,and the maximum height difference of surface (peak to valley) is 60 nmor less. Thereby, a high quality gas barrier substrate having a highflatness without a ruggedness, a pin hole or the like in the gas barrierlayer formed on the planarization layer or in a layer formed on the gasbarrier substrate of the present invention or the like can be provided.

Furthermore, according to the present invention, it is preferable thatthe gas barrier layer is a deposition film comprising a transparentinorganic oxide film, a transparent inorganic oxide nitride film, atransparent inorganic nitride film or a transparent metal film. Thereby,the gas barrier property of the gas barrier layer can be made higher.

Moreover, according to the present invention, it is preferable that theoxygen transmission rate in the gas barrier substrate is 0.3cc/m²/day·atm or less and the water vapor transmission rate is 0.1g/m²/day or less. Since the oxygen transmission rate and the water vaportransmission rate of the gas barrier substrate of the present inventionare in the ranges, it can be used for a supporting substrate of, forexample, an organic EL device or the like having a member vulnerable tothe oxygen, the water vapor or the like.

Furthermore, according to the present invention, it is preferable thatthe average surface roughness of the gas barrier substrate is 6 nm orless, and the maximum height difference of surface (peak to valley) is60 nm or less. Since the flatness in the surface of the gas barriersubstrate is in the ranges, it can be used for various applications suchas a display substrate for an organic EL device.

Moreover, in the above-mentioned invention, it is possible that a stressreleasing layer for releasing the stress applied on the base material isformed on the opposite surface where the gas barrier layer and theplanarization layer are formed. Thereby, the stress generated whenforming the gas barrier layer or the planarization layer can be reducedso that warpage in the gas barrier substrate can be prevented.

The present invention provides an organic EL device substrate comprisinga color conversion layer formed between the base material and theplanarization layer of the gas barrier substrate.

According to the present invention, since the gas barrier layer isformed on the planarization layer, the gas barrier layer can be a denselayer having a high gas barrier property without a ruggedness, a pinhole or the like. Moreover, since the planarization layer is formedbetween the gas barrier layer and the base material or the colorconversion layer, the adhesive property between the gas barrier layerand the base material or the like can be improved so that an organic ELdevice substrate having a high gas barrier property can be provided.Thereby, when forming an organic EL layer on the organic EL devicesubstrate of the present invention, invasion of oxygen, water vapor orthe like generated from the color conversion layer can be prevented sothat a high quality organic EL device substrate without generation orgrowth of a dark spot or the like can be provided.

In the above-mentioned invention, it is preferable that a planarizationcoating layer is formed on the gas barrier layer of the gas barriersubstrate. Thereby, since the surface of the organic EL device substratecan be made further flattened so that an organic EL layer without aruggedness, a pin hole or the like can be formed on the organic ELdevice substrate of the present invention, an organic EL devicesubstrate for a high quality organic EL device can be provided.

Moreover, according to the present invention, it is preferable that theplanarization coating layer has a cardo polymer. Thereby, an organic ELdevice substrate having a higher gas barrier property can be providedsince the adhesive property between the planarization coating layer andthe gas barrier layer is high, and a fine pin hole of the gas barrierlayer is filled with the planarization coating layer.

Furthermore, according to the present invention, it is preferable thatthe average surface roughness of the planarization coating layer is 6 nmor less, and the maximum height difference of surface (peak to valley)is 60 nm or less. Thereby, the transparent electrode layer, the organicEL layer or the like to be used for the organic EL device can be formedflatly.

Moreover, according to the present invention, it is preferable that theaverage surface roughness of the organic EL device is 6 mm or less, andthe maximum height difference of surface (peak to valley) is 60 nm orless. Thereby, when forming the organic EL layer on the organic ELdevice substrate of the present invention, one having a high qualitywithout generation of a dark spot or the like can be provided.

Furthermore, according to the present invention, it is preferable thatthe oxygen transmission rate in the organic EL device substrate is 0.3cc/m²/day·atm or less, and the water vapor transmission rate is 0.1g/m²/day or less. Thereby, deterioration of the organic EL layer due tothe time passage or the like can be prevented.

Moreover, according to the present invention, it is possible that acolor filter layer is provided between the base material and the colorconversion layer. Thereby, the color tone of the light emitted form theorganic EL device can be adjusted.

The present invention provides an organic EL device substrate comprisinga color conversion layer and an overcoat layer formed in this order onthe base material and being between the base material of the gas barriersubstrate and the gas barrier layer.

According to the present invention, an organic EL device substratehaving a high gas barrier property can be provided since the adhesiveproperty between the gas barrier layer and the planarization coatinglayer is high, and a fine pin hole of the gas barrier layer is filledwith the planarization coating layer. Moreover, since the planarizationlayer is formed on the surface of the organic EL device substrate, anorganic EL layer without a ruggedness, a pin hole or the like can beformed on the organic EL device substrate of the present invention sothat an organic EL device substrate for a high quality organic EL devicecan be provided.

According to the above-mentioned invention, it is preferable that theaverage surface roughness of the organic EL device is 6 nm or less, andthe maximum height difference of surface (peak to valley) is 60 nm orless. Thereby, when forming an organic EL layer on the organic EL devicesubstrate, one having a high quality without generation of a dark spotor the like can be provided.

Moreover, according to the present invention, it is preferable that theoxygen transmission rate in the organic EL device substrate is 0.3cc/m²/day·atm or less, and the water vapor transmission rate is 0.1g/m²/day or less. Thereby, deterioration of the organic EL layer due tothe time passage or the like can be prevented.

Furthermore, according to the present invention, it is possible that acolor filter layer is provided between the base material and the colorconversion layer. Thereby, the color tone of the light emitted form theorganic EL device can be adjusted.

Moreover, the present invention provides a display substrate comprisinga transparent electrode layer formed on the gas barrier substrate.

According to the present invention, by using the gas barrier substrate,a display substrate having the high gas barrier property and flatnesscan be provided to be used for various applications.

Furthermore, the present invention provides an organic EL displaysubstrate comprising a transparent electrode layer formed on the organicEL device substrate.

According to the present invention, by using the organic EL devicesubstrate, an organic EL display substrate having the high flatness andgas barrier property can be provided so that one having a high qualitywithout breakage of the transparent electrode layer or the like can beprovided.

The present invention provides an organic EL device having the organicEL display substrate, an organic EL layer comprising at least a lightemitting layer formed on the transparent electrode layer, and a counterelectrode formed on the organic EL layer.

According to the present invention, since the organic EL displaysubstrate having the high gas barrier property and flatness is used, theorganic EL layer can be formed evenly so that a high quality organic ELdevice can be provided without deterioration due to the time passage ofthe organic EL layer without generation or growth of a dark spot or thelike.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross sectional view showing an example of a gasbarrier substrate of the present invention.

FIG. 2 is a schematic cross sectional view showing another example of agas barrier substrate of the present invention.

FIG. 3 is a schematic cross sectional view of showing an example of anorganic EL device substrate of the present invention.

FIG. 4 is a schematic cross sectional view of showing another example ofan organic EL device substrate of the present invention.

FIG. 5 is a schematic cross sectional view of showing another example ofan organic EL device substrate of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENT

The present invention relates to a gas barrier substrate having the highgas barrier property and flatness to be used for a display substrate orthe like, an organic EL device substrate and a display substrate usingthe gas barrier substrate, and an organic EL display substrate and anorganic EL device using the organic EL device substrate.

A. Gas Barrier Substrate

Firstly, a gas barrier substrate of the present invention will beexplained.

The gas barrier substrate of the present invention includes twoembodiments. A first embodiment comprises a base material, aplanarization layer formed on the base material, and a gas barrier layercomprising a deposition film formed on the planarization layer, and asecond embodiment comprises a base material, a gas barrier layercomprising a deposition film formed on the base material, and aplanarization layer having a cardo polymer formed on the gas barrierlayer.

According to the present invention, in both embodiments, since theplanarization layer is provided, a gas barrier substrate having a highgas barrier property can be provided. Moreover, the surface of the gasbarrier substrate of the present invention has the flatness.

Hereinafter, each of the above-mentioned embodiments will be explained.

1. First Embodiment

Firstly, the first embodiment of the gas barrier substrate of thepresent invention will be explained. The first embodiment of the gasbarrier substrate of the present invention comprises a base material, aplanarization layer formed on the base material, and a gas barrier layercomprising a deposition film formed on the planarization layer.

The gas barrier substrate of this embodiment comprises a base material1, a planarization layer 2 formed on the base material 1, and a gasbarrier layer 3 formed on the planarization layer 2 as shown in FIG. 1.

According to this embodiment, since the gas barrier layer is formed onthe planarization layer, the dense and flat gas barrier layer can beformed without the influence of the ruggedness or the projection of thebase material. Thereby, the gas barrier property of the gas barrierlayer can be made higher. Moreover, when the gas barrier substrate ofthis embodiment is used for a display substrate, one having a highquality without a dark spot formed by a pin hole of the gas barrierlayer or the like can be provided.

Furthermore, since the surface flatness of the gas barrier substrate ishigh, even when a thin film of a light emitting layer of an organic ELdevice or the like is formed on the gas barrier substrate, the layer canbe formed evenly so that a gas barrier substrate to be used for variousapplications can be provided.

Hereinafter, each configuration of the gas barrier substrate of thisembodiment will be explained independently.

a. Planarization Layer

Firstly, the planarization layer used for the gas barrier substrate ofthis embodiment will be explained. The planarization layer used for thegas barrier substrate of this embodiment is a layer having a flatnessformed between the base material to be described later and the gasbarrier layer.

As to the flatness of the planarization layer used in this embodiment,it is preferable that the average surface roughness (Ra) is 6 nm orless, more preferably 3 nm or less, further preferably 2 nm or less, andmuch further preferably 1 nm or less. Moreover, it is preferable thatthe maximum height difference of surface (peak to valley) is 60 nm orless, more preferably 50 nm or less, further preferably 20 nm or less,and much further preferably 10 nm or less. Since the surface roughnessand the maximum height difference of surface (peak to valley) are in theranges, the gas barrier layer to be described later can be formeddensely and flatly when it is formed on the planarization layer.

Here, the surface roughness and the maximum height difference of surface(peak to valley) are the values measured by using an atomic forcemicroscope (Nanopics: product name, produced by Seiko Instruments Inc.)under the conditions of a 20 μm of scanning range and a 90 sec/frame ofscanning speed.

According to this embodiment, although the material or the like of theplanarization layer is not particularly limited as long as it is a layerhaving the flatness, it is preferable to use an organic product in thisembodiment. Thereby, the layer having a flatness can be formed easily sothat a planarization layer having a good adhesive property with the basematerial and the gas barrier layer to be described later can beprovided.

Moreover, it is preferable that the planarization layer used in thisembodiment has a cardo polymer. Thereby, the adhesive property betweenthe planarization layer and the gas barrier layer can further beimproved so as to form the gas barrier property more densely, and thusthe gas barrier property of the gas barrier layer can be made higher.

As such a cardo polymer, for example, an epoxy resin derived from abisphenol compound having a fluorene skeleton and an epichlorohydrin, anepoxy(meth) acrylate derived from the epoxy resin and a (meth) acrylicacid, an epoxy(meth) acrylate acid adduct derived from the epoxy(meth)acrylate and an acid anhydride or the like can be presented.

Here, it is preferable that the cardo polymer used in this embodimentcontains a resin having a fluorene skeleton derived from a bisphenolcompound represented by the below-mentioned general formula (1):

(wherein R1 and R2 are a hydrogen atom, an alkyl group having 1 to 5carbon atoms, or a halogen atom, which may be same or different.)

As a bisphenol compound represented by the general formula

(1), specifically, a 9,9-bis(4-hydroxy phenyl)fluorene, a9,9-bis(4-hydroxy-3-methyl phenyl)fluorene, a 9,9-bis(4-hydroxy-3-chlorophenyl)fluorene, a 9,9-bis(4-hydroxy-3-bromo phenyl)fluorene, a9,9-bis(4-hydroxy-3-fluoro phenyl)fluorene, a9,9-bis(4-hydroxy-3-methoxy phenyl)fluorene, a9,9-bis(4-hydroxy-3,5-dimethyl phenyl)fluorene, a9,9-bis(4-hydroxy-3,5-dichloro phenyl)fluorene, a9,9-bis(4-hydroxy-3,5-dibromo phenyl)fluorene or the like can bepresented. These can be used alone by one kind or as a combination oftwo or more kinds.

In this embodiment, the cardo polymer is preferably anepoxy(meth)acrylate acid adduct derived from a polybasic acid anhydrideand an epoxy(meth)acrylate resin obtained by the reaction of an epoxyresin having two or more epoxy groups in a molecule and an unsaturatedmonocarboxylic acid.

As the epoxy resin used for the formation of such an epoxy(meth)acrylateacid adduct, specifically, bisphenols such as a bis(4-hydroxyphenyl)ketone, a bis(4-hydroxyphenyl) sulfone, a2,2-bis(4-hydroxyphenyl)propane, a bis(4-hydroxyphenyl)ether, abis(4-hydroxyphenyl)hexafluoropropane, a9,9-bis(4-hydroxyphenyl)fluorene, a bis(4-hydroxyphenyl)dimethylsilaneand a 4,4′-biphenol, a tetramethyl-4,4′-biphenol, polyfunctional phenolssuch as a condensation compound obtained by reacting a 1,4-bisxylenolwith a phenol novolak, a cresol novolak, naphthol or naphthalane diol,and those, having two or more epoxy groups in a molecule, obtained byreacting a polyfunctional phenol whose aromatic ring hydrogen wassubstituted partially or totally by a halogen atom, an alkyl grouphaving 1 to 4 carbon atoms with an epichlorohydrin can be presented. Byreacting the epoxy resins with the same equivalent amount of acrylicacids such as an acrylic acid and a methacrylic acid by a known method,an epoxy(meth)acrylate resin can be provided. Furthermore, by reactingthe epoxy(meth)acrylate resin with a polybasic acid anhydride, an adductproduct of the epoxy(meth)acrylate resin and the polybasic acidanhydride can be provided.

As the polybasic acid anhydride used for the formation of such an adductproduct, specifically, alicyclic acid anhydrides such as amethyltetrahydrophthalic anhydride, a methylhexahydrophthalic anhydride,an anhydride methyl himic acid, a tetrahydrophthalic anhydride, ahexahydrophthalic anhydride, and a methylcyclohexene dicarboxylicanhydride, aromatic acid anhydrides such as a phthalic anhydride, atrimellitic anhydride, a pyromellitic anhydride, abenzophenonetetracarboxylic dianhydride, anethyleneglycolbistrimellitate anhydride, a glyceroltristrimellitateanhydride, and a biphenyltetracarboxylic dianhydride, halogen based acidanhydrides such as an anhydride hetic acid, and a tetrabromophthallicanhydride or the like can be presented. Moreover, the epoxy resins,acrylate and acid anhydrides can be used by one kind or as a mixture oftwo or more kinds.

Among the epoxy(meth) acrylate acid adducts obtained accordingly, inthis embodiment, it is preferable that a resin having a 1,000 or moreweight average molecular weight comprising a carboxyl group and aphotopolymerizable unsaturated group in the same molecule is containedin the planarization layer as it is disclosed in JP-A Nos. 60-152091,6-1938 and 8-146311. Specifically, an acid adduct of an epoxy acrylatehaving a fluorene skeleton, V259M, V301M produced by Nippon SteelChemical Co., Ltd., and an acid adduct of a cresol novolak type epoxyacrylate produced by Nippon Kayaku Co., Ltd. can be presented.

As the epoxy acrylate having a fluorene skeleton, those obtained byreacting acrylic acids with an epoxy resin obtained from a9,9-bis(4-hydroxy phenyl) fluorene can be used preferably.

According to this embodiment, the resin comprising the planarizationlayer may be a thermosetting resin, an ultraviolet ray hardening typeresin, or a thermally ultraviolet ray hardening type resin. Here, whenthe resin is a thermally ultraviolet ray hardening type resin, it ispreferable that the average molecular weight is 3,000 or more since thesoftening point can be made 45° C. or higher.

The composition of the planarization layer is not particularly limitedas long as it has the flatness as mentioned above. In this embodiment,it can be formed by, for example, mixing a resin having the cardopolymer, a polyfunctional acrylate monomer, a photopolymerizationinitiating agent or a thermally polymerization initiating agent, anepoxy resin having two or more epoxy groups in a molecule, and as neededvarious kinds of additives, coating the same on the color conversionlayer and hardening the same by the ultraviolet ray, the heat or thelike. When the resin is an ultraviolet ray hardening type resin, aphotopolymerization initiating agent is used, and when the resin is athermosetting type resin, a thermally polymerization initiating agent isused.

Here, as the polyfunctional acrylate used in this embodiment,specifically, an addition polymerization compound having a boiling pointof 100° C. or higher at an ordinary pressure, and at least twoethylenically unsaturated groups in a molecule can be presented. As sucha material, those obtained by coupling a polyhydric alcohol and anα,β-unsaturated carboxylic acid, for example, polyfunctional acrylatesor corresponding polyfunctional methacrylate such as a diethylene glycol(meth) acrylate (It denotes a diacrylate or a dimethacrylate. The sameis also applied hereinafter.), a triethylene glycol di(meth)acrylate, atetraethylene glycol di(meth)acrylate, a trimethylol propanedi(meth)acrylate, a trimethylol propane di(meth)acrylate, a trimethylolpropane tri(meth)acrylate, a 1,3-propane diol (meth)acrylate, a1,3-butane diol (meth)acrylate, a pentaerythritol tetra(meth)acrylate, adipentaerythritol hexa(meth)acrylate, and a dipentaerythritolpenta(meth) acrylate, those obtained by adding an α,β-unsaturatedcarboxylic acid such as an acrylic acid and a methacrylic acid to aglycyl group containing compound, or a mixture of a 2,2-bis(4-acryloxydiethoxy phenyl) propane, a 2,2-bis(4-methacryloxy pentaethoxy phenyl)propane, a 2,2-bis(4-methacryloxy polyethoxy phenyl)propane [produced byShin-Nakamura Chemical Co., Ltd., product name: BEP-500]; those obtainedby adding an α,β-unsaturated carboxylic acid such as acrylic acid,(meth)acrylic acid or the like to glycyl group containing compound,which is, for example, atrimethylolpropanetriglycidylethertri(meth)acrylate, a bisphenol Adiglycidyletherdi(meth)acrylate, and an acrylic acid adduct of adiglycidyl ether having a fluorene ring [produced by Nippon SteelChemical Co., Ltd., product name: ASF400]; and unsaturated amides suchas a methylene bisacryloamide, and a 1,6-hexamethylene bisacrylamide,vinyl esters such as a divinyl succinate, a divinyl adipate, a divinylphthalate, a divinyl terephthalate, a divinyl benzene-1,3-disulfonate orthe like can be presented.

Moreover, as the photopolymerization initiating agent used in thisembodiment, those known can be used alone or by several kinds. Forexample, a 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propane-1-on(commercially available product IRGACURE 907 produced by ChibaSpeciality Chemicals),

a 2-benzyl 1-2-dimethylamino-1-(4-morpholinophenyl)butanone-1(commercially available product IRGACURE 369 produced by ChibaSpeciality Chemicals), a bis(2,4,6-trimethylbenzoyl)phenylphosphineoxide (product name CGI819 produced by Chiba Speciality Chemicals), a2,4,6-trimethylbenzoyldiphenylphosphine oxide (Lucirin TPO produced byBASF),

a 2,4-trichloromethyl-(piprolonyl)-6-triazine (commercially availableproduct name TRIAZINE produced by Nihon SiberHegner K.K.) or the likecan be used.

Moreover, as the thermally polymerization initiating agent used in thisembodiment, those known can be used as long as they generate a radialwhile heating and they are capable of forming a hardened film bypolymerizing a resin having the cardo polymer and an unsaturated groupof a polyfunctional acrylate monomer. The 10 hour half life temperatureis preferably from 80° C. to hardening temperature and more preferablyfrom 100° C. to the hardening temperature.

Moreover, as the epoxy resin having two or more epoxy groups in amolecule, an epoxy compound having less than 1,000 ppm of hydrolysablechlorine component is preferable. For example, a tetramethyldiphenyltype epoxy resin YX4000 produced by Yuka-Shell Epoxy Co. Ltd., a cresolnovolak type epoxy resin of EOCN series (EOCN1020, 4400, 102S, 103S,104S or the like) produced by Nippon Kayaku Co., Ltd., a phenol novolaktype epoxy resin, a liquid three functional epoxy resin ZX-1542 producedby Tohto Kaesi Corp., a polyfunctional epoxy compound introducingglycidyl group into a secondary hydroxyl group in an epoxy compound canbe presented. The epoxy resins react with a carboxyl group of resincomponent containing the cardo polymer by heating or the like so as toform a cross-linking structure, in addition to the cross-linkingstructure formed by the unsaturated group of the resin, containing thecardo polymer, and the polyfunctional acrylate.

Moreover, according to this embodiment, as needed, various kinds ofadditives such as an anti oxidizing agent, an ultraviolet ray absorbingagent and a plasticizing agent, solvents such as a diethylene glycoldimethyl ether, a cyclohexanone, an ethanol, a chloroform, atetrahydrofuran, and a dioxane or the like can be used.

Moreover, for coating the material of the planarization layer, a spincoating method, a spray method, a blade coating method, a dip method, awet coating method using a roller coater machine, a land coater machineor the like can be used.

Moreover, as a material, a hexamethyldisiloxane, a tetramethoxysilane,an octatetramethylsilane, a cyclopentasiloxane, adecamethylcyclopentasiloxane, a2,2,5,5-tetramethyl-2,5-disila-1-oxacyclopentane, a [2-(3-cyclohexenyl)ethy]triethoxysilane, a[2-(3-cyclohexenyl)ethyl]trimethoxysilane, a(cyclohexenyloxy)trimethylsilane, a cyclohexylethyldimethoxysilane, acyclohexylmethyldimethoxysilane, a cyclohexyltrimethoxysilane, a(3-cyclopentadienylpropyl)triethoxysilane, acyclopentadienyltrimethylsilane, a cyclopentamethylenedimethylsilane, a(cyclopentenyloxy)trimethylsilane, a cyclopentyltrimethoxysilane, acyclotetramethyldimethylsilane, a cyclotrimethylenedimethylsilan or thelike is used, it can be formed also by a dry coating method such as adeposition method.

In this embodiment, it is preferable that the film thickness of theplanarization layer is in the range of 0.005 μm to 20 μm. In particular,when the planarization layer used for the gas barrier substrate of thisembodiment is formed by a wet coating method, it is preferably in therange of 0.5 μm to 20 μm, in particular, in the range of 1 μm to 5 μm.Moreover, when it is formed by a dry coating method, it is preferably inthe range of 0.005 μm to 5 μm, in particular, in the range of 0.01 μm to1 μm. Thereby, the adhesive property to the gas barrier layer can bemade preferable.

b. Gas Barrier Layer

Next, the gas barrier layer used for the gas barrier substrate of thisembodiment will be explained.

The gas barrier layer used for the gas barrier substrate of thisembodiment is formed on the planarization layer and it comprises adeposition film having the gas barrier property.

As to the gas barrier layer used in this embodiment, the materialthereof is not particularly limited as long as it is formed by thedeposition method, and it is preferably one kind or a combination of twoor more kinds of a transparent inorganic oxide film, a transparentinorganic oxide nitride film, a transparent inorganic nitride film, anda metal film.

Among the materials, the transparent inorganic oxide film is preferablya silicon oxide film, a silicon nitride oxide film, an aluminum oxidefilm, a magnesium oxide film, a titanium oxide film, a tin oxide film,or an indium oxide alloy film. Moreover, the transparent inorganicnitride film is preferably a silicon nitride film, an aluminum nitridefilm, or a titanium nitride film. Moreover, the transparent metal filmis preferably an aluminum film, a silver film, a tin film, a chromiumfilm, a nickel film, or a titanium film. Moreover, among the materials,a silicon oxide film or a silicon nitride oxide film are particularlypreferable for the good adhesive property to the planarization layer.

Moreover, in this embodiment, for the improvement of the gas barrierproperty, the deposition film may be laminated by a plurality of layers,and the combination can either be of the same kind or different kinds.

The formation of the gas barrier film in this embodiment is notparticularly limited as long as it is executed by the deposition method,and a vacuum deposition method with heating an inorganic oxide, aninorganic nitride, an inorganic oxide nitride, a metal or the like anddepositing the same on a base material, an oxidation reaction depositionmethod of using an inorganic oxide, an inorganic nitride, an inorganicoxide nitride or a metal as the material, introducing oxygen gas foroxidization, and depositing on a base material, a sputtering method ofusing an inorganic oxide, an inorganic nitride, an inorganic oxidenitride, or a metal as the target material, introducing argon gas,oxygen gas, and sputtering for depositing on the base material, an ionplating method of heating an inorganic oxide, an inorganic nitride, aninorganic oxide nitride, or a metal by a plasma beam generated by aplasma gun for depositing the same on the base material, a plasmaenhanced CVD method of using an organic silicon compound as the materialwhen forming a deposition film of a silicon oxide or the like can bepresented.

According to this embodiment, as mentioned above, it is preferable thatthe gas barrier layer is a silicon oxide film or a silicon nitride oxidefilm. As a thin film of such a silicon oxide, a deposition film formedby a low temperature plasma chemical gas phase growth method using anorganic silicon compound as the material can be used. As the organicsilicon compound, specifically, a 1,1,3,3-tetramethyldisiloxane, ahexamethyldisiloxane, a vinyltrimethylsilane, a hexamethyldisilane, amethylsilane, a dimethylsilane, a trimethylsilane, a diethylsilane, apropylsilane, a phenylsilane, vinyltriethoxysilane, atetramethoxysilane, a phenyltriethoxysilane, a methyltriethoxysilane, anoctamethylcyclotetrasiloxane or the like can be presented. In thisembodiment, among the organic silicon compounds, it is particularlypreferable to use a tetramethoxy silane (TMOS), a hexamethyl disiloxane(HMDSO) in terms of the handling property and the deposition filmcharacteristics.

Here, in this embodiment, the film thickness of the gas barrier layercan be selected optionally according to its material, and in general itis preferably in the range of 5 nm to 5,000 nm, and more preferably inthe range of 5 nm to 500 nm. Moreover, particularly in the case of thealuminum oxide or silicon oxide film, it is preferably in the range of10 nm to 300 nm. When it is thinner than the film thickness range, thegas barrier property is deteriorated to the water vapor, the oxygen orthe like. Moreover, when it is thicker than the film thickness range, acracking or the like can be generated when processing the gas barriersubstrate of this embodiment so that thereby the gas barrier propertycan be deteriorated to the water vapor, the oxygen gas or the like.

c. Base Material

Next, the base material used for the gas barrier substrate of thisembodiment will be explained. The base material used in this embodimentis not particularly limited as long as the planarization layer can beformed on the base material, and in the present invention it ispreferably a transparent base material which is transparent to a visiblelight. Thereby, the gas barrier substrate of this embodiment can be usedfor a display substrate or the like. In this embodiment, as such atransparent base material, for example, a glass plate, a film-likematerial or a sheet-like material made of an organic material or thelike can be used.

When a glass plate is used as the transparent base material in thisembodiment, it is not particularly limited as long as it has a hightransmittance to a visible light. For example, it may be an unprocessedglass plate, or a processed glass plate or the like. As such a glassplate, either an alkaline glass or a non alkaline glass can be used.However, when impurities are problematic in the gas barrier substrate ofthis embodiment, for example, a non alkaline glass such as the Pyrex(registered trademark) glass can be used preferably. Moreover, the kindof the processed glass plate can be selected optionally according to theapplication of the gas barrier substrate of this embodiment. Forexample, one produced by applying a coating process or a step-formingprocess to a transparent glass substrate or the like can be presented.

The film thickness of the glass plate is preferably in the range of 30μm to 2 mm. Particularly in the case of use as a flexible substrate, itis preferably in the range of 30 μm to 60 μm. In the case of use as arigid substrate, it is preferably in the range of 60 μm to 2 mm.

Moreover, as the organic material used as a transparent base material inthis embodiment, a polyallylate resin, a polycarbonate resin, acrystallized polyethylene terephthalate resin, apolyethyleneterephthalate resin, a polyethylenenaphthalate resin, a UVhardening type methacrylic resin, a polyether sulfone resin, apolyetheretherketone resin, a polyetherimide resin, apolyphenylenesulfide resin, a polyimide resin or the like can bepresented.

Here, in this embodiment, when the gas barrier substrate is used for,for example, an organic EL device, it preferably has the heatresistance. As an organic material having the heat resistance, forexample, a polarized polymer having a cycloalkyl skeleton can bepresented. Specifically, an acrylate compound having a cycloalkylskeleton, or a methacrylate compound, and a derivative thereof or thelike can be presented. In particular, a resin composition including a(meth) acrylate compound (in this embodiment it denotes an acrylatecompound or a methacrylate compound) having a cycloalkyl skeleton and aresin composition and a derivative thereof as disclosed in JP-A No.11-222508 can be presented.

Moreover, as to an organic material having the heat resistance, it ispreferable that the coefficient of thermal expansion in the range from aroom temperature to 150° C. is 80 ppm or less and the overall opticaltransmittance is 85% or more. When the coefficient of thermal expansionis more than the value, the substrate size is not stable at a hightemperature so that a problem of deterioration of the barrierperformance due to the thermal expansion and contraction or a problem ofintolerance of the heat process can easily occur.

Here, the coefficient of thermal expansion in this embodiment denotesthe size fluctuation amount of a sample having a 5 mm width and a 20 mmlength measured with a 5° C./minute temperature rise ratio in a 25 to200° C. temperature range while applying a certain load (2 g) in thelongitudinal direction. Moreover, the overall optical transmittancedenotes the value measured by Suga Test Instruments Co., Ltd., (COLOURS&M COMPUTER MODEL SM-C: model number).

It is preferable that the transparent base material of this embodimenthas the heat resistance of 130° C. or more, preferably 200° C. or more,further preferably 250° C. or more.

Moreover, the base material of this embodiment can be used in acombination of two or more kinds with the organic material, and forexample, a cyclicpolyolefin based resin, a polystyrene based resin, anacrylonitrile-styrene copolymer (AS resin), anacrylonitrile-butadiene-styrene copolymer (ABS resin), a poly(meth)acrylic based resin, a polycarbonate based resin, a polyethyleneterephthalate, a polyester based resin such as apolyethylenenaphthalate, a polyamide based resin such as various kindsof nylons, a polyurethane based resin, a fluorine based resin, an acetalbased resin, a cellulose based resin, a polyether sulfone based resin orthe like.

According to this embodiment, when forming the base material bylaminating a plurality of layers, for example, various films or sheetsproduced by forming resin films or sheets of each layer by a method offorming a film of one or more kinds of the resins by an extrusionmethod, a cast molding method, a T die method, a cutting method, aninflation method, or another film forming method, a method of forming afilm by the multiple layer co-extrusion using two or more kinds ofvarious kinds of resins, a method of forming a film by using two or morekinds of resins, and mixing before the film formation or the like, andfurthermore, in the case drawing is needed, by drawing one axially ortwo axially by for example the tenter method, the tublar method or thelike can be used. Moreover, the films or the sheets of the various kindsof the resins can be used by attaching.

Moreover, various plastic composition agents or additives can be addedto improve the film processing ability, the heat resistance, the weatherresistance, the mechanical property, the size stability, the antioxidizing property, the slipping property, the mold releasing property,the flame retarding property, the antimycotic property, the electriccharacteristic, the strength or the like when forming a film of one ormore kinds of the various kinds of the resins. As to the additionamount, it can be added optionally from a minute amount to several 10%according to the purpose. As a general additives, a lubricating agent, across-linking agent, an anti oxidizing agent, an ultraviolet rayabsorbing agent, a photostabilizing agent, a filling agent, areinforcing agent, a charge preventing agent, a pigment or the like canbe used. Moreover, an improving resins or the like can be used as well.

In this embodiment, when providing the base material by using theorganic materials, it is preferably in the range of 10 μm to 500 μm,more preferably 50 to 400 μm, further preferably 100 to 300 μm. When itis thicker than the range, the shock resistance is poor when processingthe gas barrier substrate of this embodiment, the winding operation isdifficult when winding so that the gas barrier property to the watervapor, the oxygen or the like is deteriorated or the like. Moreover,when it is thinner than the range, the mechanical suitability is poor sothat the gas barrier property to the water vapor, the oxygen or the likeis lowered.

Moreover, according to this embodiment, in the case of using thematerials not having the heat resistance, a glass plate or the like asthe base material, it is preferable to form a transparent resin layerhaving the heat resistance on the base material. A preferabletransparent resin layer with the heat resistance has 80 ppm or less ofcoefficient of thermal expansion in the range from a room temperature to150° C., and 85% or more of overall optical transmittance. Thereby, theheat resistance can be provided to the base material.

It is preferable that the transparent resin layer is a polarized polymerhaving a cycloalkyl skeleton as the organic material having the heatresistance. As such a material, specifically, it is preferably a (meth)acrylate compound having the polarity or a derivative thereof. Forexample, a methyl(meth)acryalte homopolymer, or a copolymer obtained bypolymerizing a mixture of a methyl(meth)acrylate and othercopolymerizable monomer having a vinyl group can be presented (in thisembodiment, (meth)acrylic denotes acrylic or methacrylic). As themonomer copolymerizable with the methyl(meth) acrylate, ester acrylatessuch as a methyl acrylate, an ethyl acrylate, a propyl acrylate, anisopropyl acrylate, a butyl acrylate, a cyclohexyl acrylate, a phenylacrylate, a benzyl acrylate, and a 2,2,2-trifluoroethyl acrylate, estermethacrylates such as an ethyl methacrylate, a cyclohexyl methacrylate,a phenyl methacrylate, and a 2,2,2-trifluoroethyl methacrylate, vinylcompounds such as an acrylonitrile and a styrene, acid anhydrides suchas a maleic anhydride and an itaconic anhydride, maleimide compoundssuch as a cyclohexyl maleimide and a phenyl maleimide or the like can bepresented.

In this embodiment, the transparent resin layer can be formed by mixingthe resin with an additive, as needed, such as a polymerizationinitiating agent or a polyfunctional acrylate monomer, and then coatingthe same on the transparent base material or glass substrate, andhardening by the ultraviolet ray irradiation.

The film thickness of the transparent resin layer is preferably 5 nm to100 μm, and it is preferable that the film thickness of the transparentresin layer is in the range of 0.00001 to 1 with the premise that thefilm thickness of the base material is 1.

d. Gas Barrier Substrate

Next, the gas barrier substrate of this embodiment will be explained.The gas barrier substrate of this embodiment is not particularly limitedas long as it has the base material, the planarization layer formed onthe base material, and the gas barrier layer formed on the planarizationlayer.

In this embodiment, it is preferable that the oxygen transmission ratein the gas barrier substrate is 0.3 cc/m²/day·atm or less, inparticular, 0.1 cc/m²/day·atm or less, and the water vapor transmissionrate is 0.1 g/m²/day or less, in particular, 0.05 g/m²/day or less.Since the oxygen transmission rate and the water vapor transmission rateof the gas barrier substrate of the present invention is in the range,those having a high gas barrier property can be provided so that theycan be used for supporting substrate having a member vulnerable to theoxygen, the water vapor, or the like, such as an organic EL device.

Here, the oxygen transmission rate is the value measured by an oxygengas transmission rate measuring device (produced by MOCON, OX-TRAN 2/20:product name) under the conditions of the measurement temperature 23°C., and the humidity 90% Rh, and the water vapor transmission rate isthe value measured by a water vapor transmission rate measuring device(produced by MOCON, PERMATRAN-W 3/31: product name) under the conditionsof the measurement temperature 37.8° C., and the humidity 100% Rh.

Moreover, according to the present invention, it is preferable that theaverage surface roughness of the gas barrier substrate is 6 nm or less,in particular, 3 nm or less, and the maximum height difference ofsurface (peak to valley) is 60 nm or less, in particular, 30 nm or less.Thereby, formation of the ruggedness, the pin hole or the like in alayer to be formed on the gas barrier substrate of the present inventioncan be prevented so that it can be used for various applications such asthe display substrate for an organic EL device.

Moreover, according to this embodiment, the planarization layer and thegas barrier layer may be laminated further on the gas barrier layer inthis order by a plurality of layers. In this embodiment, it ispreferable that the planarization layer and the gas barrier layer arelaminated in this order on the transparent base material in the range of2 to 4 layers. In particular, one having two layers, that is, the gasbarrier layer laminated on the planarization layer is most preferable.When the flatness is particularly required on the surface of the gasbarrier substrate of this embodiment, it is preferable that theplanarization layer is formed on the uppermost surface.

Moreover, according to the gas barrier substrate of this embodiment, itis preferable that a stress releasing layer is formed on the surface ofthe base material, where the opposite side to the planarization layer.Thereby, the stress generated when forming the planarization layer orthe gas barrier layer on the base material can be reduced so thatwarpage in the gas barrier substrate can be restrained.

Such a stress releasing layer is not particularly limited as long as itis a layer capable of releasing the stress, and in this embodiment, itis preferable to form the same layer as the gas barrier layer. Thereby,since the gas barrier property can be provided on the opposite surfaceof the gas barrier substrate, a gas barrier substrate having a highergas barrier property can be provided. Moreover, the stress releasinglayer is not limited to one layer, and for example, one having the gasbarrier layer and the planarization layer laminated or the like can beused as well.

2. Second Embodiment

Next, the second embodiment of the gas barrier substrate of the presentinvention will be explained. The second embodiment of the gas barriersubstrate of the present invention comprises a base material, a gasbarrier layer comprising a deposition film formed on the base material,and a planarization layer, formed on the gas barrier layer, having acardo polymer.

The gas barrier substrate of this embodiment comprises a base material1, a gas barrier layer 3 formed on the base material 1, and aplanarization layer 2 formed on the gas barrier layer 3 as shown in FIG.2.

According to this embodiment, since the cardo polymer used for theplanarization layer has a high adhesive property to the gas barrierlayer so that it can fill a pin hole of the gas barrier layer or thelike, thereby a gas barrier substrate having a high gas barrier propertycan be provided. Moreover, since the planarization layer is formed onthe gas barrier substrate surface, it has a flat surface. Thereby, forexample, when forming an organic EL layer of an organic EL device, aneven layer can be provided so that a gas barrier substrate to be usedfor the various applications can be provided.

Hereinafter, each configuration of the gas barrier substrate of thisembodiment will be explained. Since the gas barrier layer, the basematerial or the like used in this embodiment are same as those explainedin the first embodiment, explanation is omitted here.

a. Planarization Layer

Firstly, a planarization layer used in this embodiment will beexplained. The planarization layer used in this embodiment is a layer tobe formed on the gas barrier layer, and having a cardo polymer. Thecardo polymer used in this embodiment in general has a good adhesiveproperty to the material used for the gas barrier layer. Thereby, whenthe planarization layer is formed on the gas barrier layer, it can beadhered with the gas barrier layer, and it can fill a minute pin hole ofthe gas barrier layer or the like so that a gas barrier substrate havinga high gas barrier property can be provided.

Here, since the planarization layer having a cardo polymer used in thisembodiment is same as those explained for the planarization layer of thefirst embodiment, detailed explanation is omitted here.

b. Gas Barrier Substrate

Next, the gas barrier substrate of this embodiment will be explained.

The gas barrier substrate of this embodiment is not particularly limitedas long as it comprises the base material, the gas barrier layer formedon the base material, and the planarization layer formed on the gasbarrier layer. In this embodiment, it is preferable that the gas barrierlayer is laminated further on the planarization layer. Thereby, the gasbarrier property of the gas barrier substrate of this embodiment can bemade higher. Moreover, as needed, the gas barrier layer or theplanarization layer can further be laminated. Particularly when theflatness is required for the surface of the gas barrier substrate, it ispreferable that the planarization layer is formed on the uppermostsurface of the gas barrier substrate.

Moreover, according to the gas barrier substrate of this embodiment, asin the first embodiment, the stress releasing layer or the like may beformed.

Here, since the water vapor transmission rate, the oxygen transmissionrate, the surface roughness, the maximum height difference of surface(peak to valley) or the like of this embodiment are same as thoseexplained in the first embodiment, explanation is omitted here.

B. Organic EL Device Substrate

Next, the organic EL device substrate of the present invention will beexplained.

The organic EL device substrate of the present invention includes twoembodiments. Firstly, as the third embodiment, an organic EL devicesubstrate comprises a base material, a color conversion layer formed onthe base material, a planarization layer formed on the color conversionlayer, and a gas barrier layer comprising a deposition film formed onthe planarization layer. As the fourth embodiment, an organic EL devicesubstrate comprises a base material, a color conversion layer formed onthe base material, an overcoat layer formed on the color conversionlayer, a gas barrier layer comprising a deposition film formed on theovercoat layer, and a planarization layer, formed on the gas barrierlayer, having a cardo polymer.

According to the present invention, since the planarization coat layeror planarization layer having the flatness is formed in bothembodiments, the flatness of the surface of the organic EL devicesubstrate can be made higher. Thereby the organic EL layer can be formedflatly when forming an organic EL layer using the organic EL device sothat one having a high quality without formation of a dark spot or thelike can be provided.

Moreover, according to the present invention, since the gas barrierlayer is laminated on the planarization layer, the gas barrier layer canbe a dense layer having a high gas barrier property. Thereby, whenforming an organic EL layer on the organic EL device substrate of thepresent invention, an organic EL device substrate capable of preventinginvasion of the oxygen, the water vapor or the like generated from thecolor conversion layer into the organic EL layer side can be provided.

Hereinafter, each embodiment of the organic EL device substrate of thepresent invention will be explained.

1. Third Embodiment

Firstly, the third embodiment of the organic EL device substrate of thepresent invention will be explained. The third embodiment of the organicEL device substrate of the present invention comprises a base material,a color conversion layer formed on the base material, a planarizationlayer formed on the color conversion layer, and a gas barrier layercomprising a deposition film formed on the planarization layer. That is,the color conversion layer is formed between the base material and theplanarization layer of the gas barrier substrate mentioned in the firstembodiment of the “A. Gas barrier substrate”.

The organic EL device substrate of this embodiment comprises the basematerial 1, the color conversion layer 4 (4R, 4G and 4B) formed on thebase material 1, and the planarization layer 2 formed on the colorconversion layer, and the gas barrier layer 3 formed on theplanarization layer 2 as shown in FIG. 3.

According to this embodiment, since the gas barrier layer is formed onthe planarization layer having the flatness, the gas barrier layer canbe a dense layer having a high gas barrier property. Moreover, since theplanarization layer is formed between the gas barrier layer and the basematerial or the color conversion layer, the adhesive property of the gasbarrier layer and the base material or the like can be made higher.Thereby, one having a high gas barrier property can be provided.Accordingly, when the organic EL device substrate of this embodiment isused for the organic EL device, one having a high quality can beprovided without suffering the influence of the oxygen or the watervapor generated from the color conversion layer due to the time passageor from the outside of the organic EL device.

Moreover, according to this embodiment, since the planarization layer isformed, the surface of the organic EL layer substrate can be made flatso that the organic EL layer can be formed evenly when providing anorganic EL device. Thereby, an organic EL device without a dark spot orthe like can be provided.

Hereinafter, each configuration of the organic EL device substrate ofthis embodiment will be explained.

a. Planarization Layer

Firstly, the planarization layer used for the organic EL devicesubstrate of this embodiment will be explained. The planarization layerused in this embodiment is formed on the color conversion layer. Theplanarization layer has a flat surface, flattens the grade difference ofthe color conversion layer, and protects the color conversion layer fromflawing generated when forming the gas barrier layer or the like.

Since the color conversion layer has a relatively high film thickness,it is difficult to form a flat layer when the gas barrier layer or thelike is formed on the color conversion layer. Furthermore, there is aproblem that the color conversion layer is corroded when forming the gasbarrier layer or the like. In this embodiment, by forming theplanarization layer on the color conversion layer, the color conversionlayer can be protected and the ruggedness of the color conversion layercan be flattened to obtain further flattened surface. Thereby, the gasbarrier layer can be formed densely and flatly so that an organic ELdevice substrate having a high gas barrier property can be provided.

Moreover, it is preferable that the planarization layer used in thisembodiment has a high transmittance to the visible light. Specifically,the transmittance to the visible light (in the range of 400 nm to 700nm) is preferably 50% or more, in particular, 85% or more. Thereby, onehaving a high luminosity can be provided when providing an organic ELdevice.

Here, the transmittance to the visible light is the value measured by aspectrophotometer (type number: UV-3100PC produced by ShimadzuCorporation).

It is preferable that the film thickness of the planarization layer inthis embodiment is in the range of 0.005 μm to 20 μm as mentioned forthe planarization layer of the “A. Gas barrier substrate 1. Firstembodiment”, and it is more preferably in the range of 5 μm to 10 μm.Thereby, the surface of the color conversion layer can be flattened, andmoreover, corrosion of the color conversion layer when forming the gasbarrier layer or the like can be prevented.

Since the material of the planarization layer, the forming method or thelike are same as those mentioned for the planarization layer of the “A.Gas barrier substrate 1. First embodiment”, explanation is omitted here.

b. Gas Barrier Layer

Next, the gas barrier layer used in this embodiment will be explained.The gas barrier layer used in this embodiment is a layer having the gasbarrier property, to be formed on the planarization layer by thedeposition method. In this embodiment, since the gas barrier layer isformed on the planarization layer, the gas barrier property can beprovided to the organic EL device substrate of this embodiment, and alayer having the excellent flatness and gas barrier property can beprovided.

As such a gas barrier layer, one having the electric insulation propertyand the resistance to an organic solvent is preferable. Furthermore, itpreferably has the transmittance to the visible light of 50% or more, inparticular, 85% or more. Thereby, one having a high luminosity can beprovided when forming an organic EL device. Here, the transmittance tothe light is measured by the method mentioned above.

Moreover, according to this embodiment, since the transparent electrodelayer is formed on the gas barrier layer when providing, for example, anorganic EL display substrate, it preferably has enough hardness to beapplied when forming the transparent electrode layer. Specifically, itpreferably has the hardness of 2H or more in the pencil hardness test ofJIS K5400.

Since the material of the gas barrier layer, the forming method, thefilm thickness or the like are same as those mentioned for the gasbarrier layer of the “A. Gas barrier substrate 1. First embodiment”,explanation is omitted here.

c. Color Conversion Layer

Next, the color conversion layer used in this embodiment will beexplained. The color conversion layer used in this embodiment to beformed on the base material is a layer containing a fluorescent materialfor absorbing the light emitted from the organic EL layer and emitting avisible light range fluorescent light. The color conversion layer usedin this embodiment is not particularly limited as long as it can provideblue, red and green colors by using a light from the organic EL lightemitting layer. For example, the color conversion layers each emittingblue, red, or green light of three colors of fluorescent layers may beformed. For example, when using a blue organic EL light emitting layerfor the organic EL device, a transparent layer may be formed instead ofthe blue conversion layer.

Such a color conversion layer in general contains an organic fluorescentpigment for absorbing the light from the organic EL light emitting layerand emitting a fluorescent light, and a matrix resin.

The organic fluorescent pigment contained in the color conversion layerabsorbs a light in a near ultraviolet range or a visible range emittedfrom a light emitting member, in particular, a light in a blue or bluegreen range, and emits a visible light of a different wavelength as thefluorescent light. Since the blue light emitting layer is used ingeneral as the light emitting layer for the organic EL layer, in thisembodiment, it is preferable to use one or more kinds of fluorescentpigments which emit at least a fluorescent light in a red range, and itis preferable to use in a combination with one or more kinds offluorescent pigments which emit a fluorescent light in a green range.

That is, when using an organic EL light emitting layer emitting a lightin a blue or blue green range as the light source, if a light in a redrange is to be obtained by passing the light from the organic EL lightemitting layer through a mere red filter layer, an extremely dark outputlight is provided because the light having a red range wavelength islittle originally. Therefore, by converting the light in the blue orblue green range from the organic EL light emitting layer into a lightin a red range by the fluorescent pigment, a light in a red range havinga sufficient strength can be output.

In contrast, same as in the case of a light in a red range, a light in agreen range can be output by converting the light from the organic ELlight emitting layer into a light in a green range by another organicfluorescent pigment. Alternatively when the light emission of theorganic EL light emitting layer includes a light in a green rangesufficiently, the light from the organic EL light emitting layer may beoutput simply through the green color filter layer. Furthermore, as to alight in a blue range, although it can be output by converting the lightfrom the organic EL light emitting layer using a fluorescent pigment, itis preferable to output the light of the organic EL light emitting layersimply through the blue color filter layer.

As the fluorescent pigment for absorbing a light in a blue to blue greenrange emitted from the organic EL light emitting layer and emitting afluorescent light in a red range, for example, rhodamine based pigmentssuch as rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101,rhodamine 110, sulfo rhodamine, basic violet 11, and basic red 2,cyanine based pigments, pyridine based pigments such as a1-ethyl-2-[4-(p-dimethylaminophenyl)-1,3-butadienyl]-pyridi niumperchlorate (pyridine 1), oxadine based pigments or the like can bepresented. Furthermore, various kinds of dyes (direct dyes, acidic dyes,basic dyes, dispersion dyes or the like) can be used as well as long asthey have the fluorescent property.

Moreover, as the fluorescent pigment for absorbing a light in a blue orblue green range emitted from the organic EL light emitting layer andemitting a fluorescent light in a green range, for example, coumarinbased pigments such as a 3-(2′-benzothiazolyl)-7-diethyl amino coumarin(coumarin 6), a 3-(2′-benzoimidazoyl)-7-N,N-diethylamino coumarin(coumarin 7), a 3-(2′-N-methylbenzoimidazolyl)-7-N,N-diethylaminocoumarin (coumarin 30), and a2,3,5,6-1H,4H-tetrahydro-8-trifluoromethylquinolidine(9,9a, 1-gh)coumarin (coumarin 153), coumarin pigment based dyes such as basicyellow 51, naphthalimide based pigments such as solvent yellow 11, andsolvent yellow 116 or the like can be presented. Furthermore, variouskinds of dyes (direct dyes, acidic dyes, basic dyes, dispersion dyes orthe like) can be used as well as long as they have the fluorescentproperty.

The organic fluorescent pigments used in this embodiment can be kneadedpreliminarily into an ester polymethacrylate, a polyvinylchloride, avinylchloride-vinylacetate copolymer resin, an alkyd resin, an aromaticsulfone amide resin, a urea resin, a melamine resin, a benzoguanamineresin, a resin mixture thereof or the like so as to be a pigment forproviding the organic fluorescent pigment. Moreover, the organicfluorescent pigments and the organic fluorescent coloring matters (inthis embodiment, the two items are both referred to as the organicfluorescent pigments) can be used alone, or in a combination of two ormore kinds for adjusting the color hue of the fluorescent light.

The organic fluorescent pigment used in this embodiment is contained inthe color conversion layer by 0.01 to 5% by weight based on the weightof the color conversion layer, more preferably by 0.1 to 2% by weight.When the content of the organic fluorescent pigment is less than 0.01%by weight, the wavelength conversion cannot be executed sufficiently.Moreover, when the content is more than 5%, the color conversionefficiency is lowered due to the effect of the density extinction or thelike.

Moreover, as the matrix resin used in this embodiment, those produced bypolymerizing or cross-linking a photosetting or photothermal combinationtype hardening type resin (resist) by a photo and/or heat treatment forgenerating the radical species or ion species, and then make theminsoluble and infusible can be used. For patterning the color conversionlayer, it is preferable that the photosetting or photothermalcombination type hardening type resin is preferably soluble with anorganic solvent or an alkaline solution in an unexposed state.

The photosetting or photothermal combination type hardening resinincludes (1) a composition made of an acrylic based polyfunctionalmonomer having a plurality of acroyl groups or methacroyl groups and anoligomer, and a photo or thermal polymerization initiating agent, (2) acomposition made of a polyvinyl ester cinnamate and a sensitizing agent,(3) a composition made of a chain like or cyclic olefin and a bisazide,(4) a composition made of a monomer having an epoxy group and an acidgenerating agent or the like. In particular, (1) the composition made ofan acrylic based polyfunctional monomer and an oligomer, and a photo orthermal polymerization initiating agent is preferable for the capabilityof highly precise patterning and the high reliability of the solventresistance, the heat resistance or the like. As mentioned above, thematrix resin is formed by conducting the light and/or the heat to thephotosetting or photothermal combination type hardening type resin.

Moreover, it is preferable that the photopolymerization initiatingagent, the sensitizing agent and the acid generating agent to be used inthis embodiment start the polymerization by a light of a wavelength notto be absorbed by the contained fluorescent conversion pigment. When theresin itself in the photosetting type or photothermal combination typehardening type resin can be polymerized by the light or the heat, thephotopolymerization initiating agent and the thermal polymerizationinitiating agent may not be added.

The color conversion layer used in this embodiment can be formed byforming a resin layer by coating on the supporting substrate a solutionor a dispersion containing a photosetting type or photothermalcombination type hardening resin as the materials for the matrix resinand an organic fluorescent pigment, polymerizing by exposing thephotosetting type or photothermal combination type hardening type resinin a desired portion, and then patterning. The above-mentionedpatterning operation can be executed by a common method by using anorganic solvent or an alkaline solution for eliminating the resin in theunexposed part or the like.

The film thickness of the color conversion layer used in this embodimentis preferably 5 μm or more, and in particular in the range of 8 μm to 15μm. Moreover, the shape of the color conversion layer can be selectedoptionally according to the purposed organic EL device. For example,rectangular or round areas of red, blue and green colors as a set can beformed each on a transparent base material, or they can be formed likestripes. Moreover, a specific color conversion layer may be formed bythe amount more than the other color conversion layers.

d. Base Material

Next, the base material used in this embodiment will be explained. Thebase material used in this embodiment has the color conversion layerformed thereon, and it is not particularly limited as long as it can betransmitted a light emitted form the light emitting layer of the organicEL device and transmitted through the color conversion layer. In thisembodiment, those having the solvent resistance, the heat resistance,and the excellent size stability are preferable. Thereby, the formationof the color conversion layer can be executed stably.

Since the material of the base material, the film thickness, the formingmethod, and the other points are same as those mentioned for the basematerial of the “A. Gas barrier substrate 1. First embodiment”,explanation is omitted here.

e. Organic EL Device Substrate

Next, the organic EL device substrate of this embodiment will beexplained. The organic EL device substrate of this embodiment is notparticularly limited as long as it comprises the color conversion layerformed on the base material, the planarization layer formed on the colorconversion layer, and the gas barrier layer formed on the planarizationlayer.

In this embodiment, it is preferable that the oxygen transmission ratein the organic EL device substrate is 0.3 cc/m²/day·atm or less, inparticular, 0.1 cc/m²/day·atm or less, and the water vapor transmissionrate is 0.1 g/m²/day or less, in particular, 0.05 g/m²/day or less.Since the oxygen transmission rate and the water vapor transmission rateof the organic EL device substrate of the present invention is in therange, those having a high gas barrier property can be provided so thatan organic EL device substrate capable of forming a high quality organicEL device can be provided. Here, the oxygen transmission rate and watervapor transmission rate are the values measured by the methods mentionedabove.

Moreover, in this embodiment, it is preferable that the transmittance ofthe organic EL device substrate to the visible light is 50% or more, inparticular, 85% or more. Thereby, when providing an organic EL devicewith the organic EL device substrate of this embodiment, one having ahigh luminosity can be provided. Here, the transmittance is the valuemeasured by the method mentioned above.

Moreover, in this embodiment, it is preferable that the surface averagecoarseness of the organic EL device substrate is 6 nm or less, inparticular, 3 nm or less, and the maximum height difference of surface(peak to valley) is 60 nm or less, in particular, 30 nm or less.Thereby, formation of the ruggedness, the pin hole or the like in alayer to be formed on the organic EL device substrate can be preventedso that generation of a dark spot or the like in the organic EL devicecan be prevented.

According to this embodiment, for example as shown in FIG. 4, it ispreferable that the color conversion layer 4 (4R, 4G, 4B) is formed onthe base material 1, the planarization layer 2 is formed on the colorconversion layer 4, the gas barrier layer 3 is formed on theplanarization layer 2, and the planarization coat layer 5 formed furtheron the gas barrier layer 3. Thereby, the surface of the organic ELdevice substrate of this embodiment can be made flat. Moreover, in thisembodiment, the planarization coat layer and the gas barrier layer maybe laminated in the range of 2 to 4 layers in this order on the gasbarrier layer.

Furthermore, according to this embodiment, as needed, a color filterlayer may be formed between the base material and the color conversionlayer. Thereby, when providing an organic EL device with the organic ELdevice substrate of this embodiment, an organic EL device having a highcolor reproductivity can be provided.

Moreover, according to the organic EL device substrate of thisembodiment, it is preferable that that a stress releasing layer isformed on the opposite surface where color conversion layer is formed.Thereby, the stress generated when forming the color conversion layer orthe gas barrier layer on the transparent base material can be reduced sothat warpage in the organic EL device substrate can be restrained.

Since the stress releasing layer is same as that mentioned for the gasbarrier substrate of the “A. Gas barrier substrate 1. First embodiment”,explanation is omitted here.

Hereinafter, the planarization coat layer and the color filter used forthe organic EL device substrate of this embodiment will be explained.

(Planarization Coat Layer)

Firstly, the planarization coat layer to be used for the organic ELdevice substrate of this embodiment will be explained. In the organic ELdevice substrate of this embodiment, since the planarization coat layeris formed on the gas barrier layer, the flatness of the surface of theorganic EL device substrate can be improved so that generation andgrowth of a dark spot or the like can be prevented when providing anorganic EL device.

It is preferable that the film thickness of the planarization coat layerused in this embodiment is in the range of 0.05 μm to 10 μm. Moreover,as to the flatness, the average surface roughness (Ra) is preferably 6nm or less, and more preferably 20 nm or less. Moreover, it ispreferable that the maximum height difference of surface (peak tovalley) is 60 nm or less, more preferably 20 nm or less. Thereby, evenwhen forming a light emitting layer or the like of the organic EL deviceon the organic EL device substrate of this embodiment, a high qualityorganic EL device can be formed without a dark spot or the like withoutforming the ruggedness or the pin hole.

Moreover, when the organic EL device substrate of this embodiment isused as the organic EL display substrate, since the transparentelectrode layer is formed on the planarization coat layer, it preferablyhas the stable hardness to the force applied when forming thetransparent electrode layer, and specifically, it preferably has thehardness of 2H or more in the pencil hardness test of JIS K5400.

Since the material, the forming method or the like of the planarizationcoat layer are same as those mentioned for the planarization layer ofthe “A. Gas barrier substrate 1. First embodiment”, explanation isomitted here.

(Color Filter Layer)

Next, the color filter layer used in this embodiment will be explained.The color filter layer used in this embodiment is a layer for adjustingthe color tone of the light transmitted through the color conversionlayer. The color filter layers of blue, red, and green colors are eachformed at a position corresponding to each color of the color conversionlayer. Since the color filter layer is formed, in the case of the use ofthe organic EL device substrate of this embodiment for the organic ELdevice, highly pure color development can be achieved so that one havinga high color reproductivity can be provided.

The color filter layer used in this embodiment can be formed by aphotolithography method or the like with a pigment or a resin to be usedin general for a color filter. Moreover, a black matrix may be formedbetween the colors.

2. Fourth Embodiment

Next, the fourth embodiment of the organic EL device substrate of thepresent invention will be explained. The fourth embodiment of theorganic EL device substrate of the present invention comprises a basematerial, a color conversion layer formed on the base material, anovercoat layer formed on the color conversion layer, a gas barrier layercomprising a deposition film formed on the overcoat layer, and aplanarization layer, having a cardo polymer, formed on the gas barrierlayer. That is, the color conversion layer and the overcoat layer areformed in this order and between the base material and the gas barrierlayer of the gas barrier substrate mentioned in the second embodiment ofthe “A. Gas barrier substrate”.

The organic EL device substrate of this embodiment comprises the basematerial 1, the color conversion layer 4 (4R, 4G and 4B) formed on thebase material 1, the overcoat layer 6 formed on the color conversionlayer 4, the gas barrier layer 3 formed on the overcoat layer 6, and theplanarization layer 2 formed on the gas barrier layer 3 as shown in FIG.5.

According to this embodiment, since the planarization layer is formed onthe gas barrier layer, the adhesive property between the gas barrierlayer and the planarization layer is high and furthermore, since the pinhole of the gas barrier layer can be filled by the planarization layeror the like so that an organic EL device substrate having a high gasbarrier property can be provided. Moreover, since the planarizationlayer is formed on the surface of the organic EL device substrate, onehaving the flat surface can be provided so that one having a highquality without a pin hole or the like can be provided when forming anorganic EL layer or the like on the organic EL device substrate.

Hereinafter, each configuration of the organic EL device substrate ofthis embodiment will be explained. Since the base material, the colorconversion layer and the gas barrier layer are same as those explainedin the third embodiment or in “A. Gas barrier substrate 1. Firstembodiment”, explanation is omitted here.

a. Planarization Layer

Firstly, the planarization layer used in this embodiment will beexplained. The planarization layer used in this embodiment is a layer tobe formed on the gas barrier layer having a cardo polymer, with the flatsurface. The cardo polymer used in this embodiment in general has a goodadhesive property with the material used for the gas barrier layer.Thereby, since the planarization layer can adhere with the gas barrierlayer and the minute pin hole or the like of the gas barrier layer canbe filled when it is formed on the gas barrier layer so that an organicEL device substrate having a high gas barrier property can be formed.

Moreover, when the organic EL device substrate of this embodiment isused as the organic EL display substrate, since the transparentelectrode layer is formed on the planarization layer, it preferably hasthe stable hardness to the force applied when forming the transparentelectrode layer, and specifically, it preferably has the hardness of 2Hor more in the pencil hardness test of JIS K5400.

Since the transmittance to the visible light of the planarization layer,the film thickness or the like are same as those explained in the thirdembodiment, and furthermore, the material, the forming method or thelike of the planarization layer are same as those mentioned for theplanarization layer of the “A. Gas barrier substrate 1. Firstembodiment”, explanation is omitted here.

b. Overcoat Layer

Next, the overcoat layer used in this embodiment will be explained. Theovercoat layer used in this embodiment is a layer formed on the colorconversion layer for planarization of the grade difference of the colorconversion layer, or preventing corrosion or the like of the colorconversion layer when forming the gas barrier layer.

The overcoat layer used in this embodiment is preferably made of amaterial which is transparent to the visible light. Specifically, thetransmittance to the visible light is preferably 50% or more, furtherpreferably 85% or more. Thereby, when forming an organic EL device, onehaving a high luminosity can be provided. Here, the transmittance to thevisible light is measured by the method mentioned above.

As the overcoat layer used in this embodiment, specifically, aphotosetting type resist material having a reactive vinyl group such asan acrylic acid based one, a methacrylic acid based one, a polyvinylcinnamate based one, and cyclic rubber based one can be used. Thesematerials can be used by coating on the substrate by, for example, aspin coating method, a roll coating method, a bar coating method, a castmethod or the like, exposing the coating film via a predetermined photomask, and then eliminating the unnecessary part using a developing agentso as to form a pattern. The film thickness can be set such that theruggedness of the color conversion layer can be flattened, and it is ingeneral 5 μm to 10 μm.

Moreover, the overcoat layer can be formed also by printing or coating alow melting point glass paste made of a low melting point glass frit, abinder resin and a solvent.

c. Organic EL Device Substrate

Next, the organic EL device substrate of this embodiment will beexplained. The organic EL device substrate of this embodiment is notparticularly limited as long as it has a base material, a colorconversion layer formed on the base material, an overcoat layer formedon the color conversion layer, a gas barrier layer comprising adeposition film formed on the overcoat layer, and a planarization layer,having a cardo polymer, formed on the gas barrier layer. Also in thisembodiment, the planarization layer and the gas barrier layer may beformed in this order on the gas barrier layer, moreover, a stressreleasing layer or a color filter layer may be formed as well.

Since the stress releasing layer used in this embodiment is same as thatmentioned in the gas barrier substrate of the “A. Gas barriersubstrate 1. First embodiment”, and the color filter layer is same asthat explained in the third embodiment, explanation is omitted here.

3. Others

Moreover, the organic EL substrate of the present invention may be anembodiment comprising a base material, a color conversion layer formedon the base material, an overcoat layer formed on the color conversionlayer, a planarization layer formed on the overcoat layer, and a gasbarrier layer comprising a deposition film, formed on the planarizationlayer. According to this embodiment, since the gas barrier layer isformed on the planarization layer, the gas barrier layer can be formeddensely, and moreover, the adhesive property between the gas barrierlayer and the transparent base material or the like can be improved, anorganic EL device substrate having a high gas barrier property can beprovided.

Moreover, as needed, a planarization layer or a gas barrier layer may belaminated, and moreover, a stress releasing layer, a color filter layeror the like may be formed.

Since the base material, the color conversion layer, the planarizationlayer, the gas barrier layer, the color filter layer or the like used inthis embodiment are same as those explained in the third embodiment, andmoreover, the overcoat layer is same as that explained in the fourthembodiment or in the “A. Gas barrier substrate 1. First embodiment”,explanation is omitted here.

C. Display Substrate

Next, the display substrate of the present invention will be explained.The display substrate of the present invention comprises a transparentelectrode layer formed on the gas barrier substrate.

According to the present invention, since the gas barrier substrate isused, a display substrate having a high gas barrier property and a highflatness can be provided so that a high quality display substratewithout deterioration of the electrode, breakage or the like can beprovided.

The transparent electrode used in the present invention can either be ananode or a cathode as long as it is an electrode layer which istransparent to the visible light, and it can be selected optionallyaccording to the applications of the display substrate of the presentinvention.

As such an anode, specifically, an indium tin oxide (ITO), an indiumzinc oxide (IZO) or the like can be used preferably. Moreover, thesetransparent electrode layers can be formed by a vacuum depositionmethod, a sputtering method, a PVD method such as an ion plating methodor the like.

Here, the film thickness of the transparent electrode layer used in thepresent invention is preferably in the range of about 50 nm to 500 nm.Moreover, when it is thinner than the film thickness of the transparentelectrode layer, the conductivity is lowered, and furthermore, when thefilm thickness of the transparent electrode layer is thicker than therange, the conductivity is deteriorated due to cracking of theconductive film or the like while progressing of the post process, andthus it is not preferable.

D. Organic EL Display Substrate

Next, the organic EL display substrate of the present invention will beexplained. The organic EL display substrate of the present inventioncomprises a transparent electrode layer formed on the organic EL devicesubstrate.

According to the present invention, since the organic EL devicesubstrate having a high gas barrier property and a high flatness isused, an organic EL display substrate which is not having breakage ofthe transparent electrode layer or the like, and is capable of formingan even organic EL layer such as a light emitting layer on the organicEL display substrate can be provided.

Since the transparent electrode layer used in the present invention issame as that mentioned in the “C. Display substrate”, explanation isomitted here.

E. Organic EL Device

Next, the organic EL device of the present invention will be explained.The layer configuration or the like of the organic EL device of thepresent invention is not particularly limited as long as it comprises anorganic EL layer formed on the transparent electrode layer of theorganic EL display substrate and a counter electrode formed on theorganic EL layer, and it can be selected optionally according to theapplication or the like of the organic EL device.

According to the present invention, since the organic EL layer or thelike is formed on the organic EL display substrate using the organic ELdevice substrate having a high flatness and a high gas barrier property,a high quality organic EL device capable of forming the organic EL layeror the like evenly without suffering the influence of the oxygen, thewater vapor or the like due to the time passage can be provided.

The organic EL device of the present invention comprises an organic ELlayer formed between a transparent electrode layer formed on the organicEL display substrate, and a counter electrode having an electrodeopposite to that of the transparent electrode, formed facing thethereto. Here, as the organic EL layer in the present invention, thoseused usually for the organic EL device can be used, and they compriseone or a plurality of organic layers including at least a light emittinglayer. That is, the organic EL layer is a layer including at least alight emitting layer, with the layer configuration of one or moreorganic layers. In general, in the case of forming the organic EL layerby a wet method by coating, since a large number of layers can hardly belaminated due to the interaction to the solvent, it comprises one or twolayers of organic layers in most cases, however, by skillfully providingthe organic material or combining a vacuum deposition method, a largernumber of layers can be formed.

As the organic layer formed in the organic EL layer in addition to thelight emitting layer, layers usually used for the organic EL layer canbe used. For example, a charge injection layer such as a hole injectionlayer and an electron injection layer can be presented. Furthermore, asthe other organic layers, a charge transporting layer such as a holetransporting layer for transporting the hole to the light emittinglayer, and an electron transporting layer for transporting the electronto the light emitting layer can be presented. In general, these areformed integrally with the charge injection layer by providing thefunction of the charge transportation to the charge injection layer inmost cases. Additionally, as the organic layer to be formed in the ELlayer, a layer for preventing piercing through of the hole or theelectron for improving the re-coupling efficiency such as a carrierblocking layer or the like can be presented.

Moreover, the organic EL device of the present invention may comprise anorganic EL layer formed on the transparent electrode layer of thedisplay substrate and a counter electrode formed on the organic ELlayer.

The present invention is not limited to the embodiments. Theabove-mentioned embodiments are examples, and any one having thesubstantially same configuration as the technological concept mentionedin the claims of the present invention and providing the same effectscan be included in the technological scope of the present invention.

EXAMPLES

Hereinafter, with reference to the examples and the comparativeexamples, the present invention will be explained further specifically.

Example 1

<Production of the Gas Barrier Substrate Comprising BaseMaterial/Transparent Resin Layer/Gas Barrier Layer/Planarization Layer>

A transparent layer was formed by coating a (meth) acrylic based resin(resin composition made of 94 parts by weight of a bis(meth) acrylateincluding alicyclic core structure and 6 parts by weight of a mono(meth)acrylate including alicyclic core structure) on a sheet like (30 cm×21cm) polycarbonate resin base material by a spin coating method by a 1.0μm film thickness, drying at 120° C. for 2 minutes by a hot plate,irradiating a UV by a 1 J/cm², and drying at 160° C. for 60 minutes byhot air. The base material with the transparent resin layer formed has a63 ppm of coefficient of thermal expansion and 89% of overall opticaltransmittance.

The base material obtained in the process was disposed in the chamber ofa magnetron sputtering device. A gas barrier layer was deposited on thebase material by forming a film using a silicon nitride as the targetunder the below-mentioned film forming conditions until the filmthickness of the silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Thereafter, a planarization layer was formed by coating a coating agentcontaining a cardo polymer as the main agent (V-259-EH: produced byNippon Steel Chemical Co., Ltd.) on the gas barrier layer by a spincoating method by a 1.0 μm film thickness, and drying at 120° C. for 2minutes, and then at 160° C. for 60 minutes by hot air.

Example 2

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer (Ion Plating Method)/Planarization Layer>

A sheet like (30 cm×21 cm) (meth)acrylic based resin (resin compositionmade of 94 parts by weight of a bis(meth)acrylate including alicycliccore structure and 6 parts by weight of a mono(meth)acrylate includingalicyclic core structure) film (the coefficient of thermal expansion is60 ppm, and the overall optical transmittance is 86%) was disposed inthe chamber of an ion plating device as the base material. A gas barrierlayer was deposited on the base material by forming a film using asilicon nitride as the sublimation material under the below-mentionedfilm forming conditions until the film thickness of the silicon nitrideoxide became 100 nm.

Film forming pressure: 1.5×10−1Pa

Argon gas flow rate: 12 sccm

Nitrogen gas flow rate: 20 scan

Film forming electric current value: 100 A

A planarization layer was formed by coating a coating agent containing afluorene as the main agent (V-259-EH: produced by Nippon Steel ChemicalCo., Ltd.) on the gas barrier layer formed in the process by a spincoating method by a 1.0 μm film thickness, and drying at 120° C. for 2minutes, and then at 160° C. for 60 minutes by hot air.

Example 3

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer (CVD Method)/Planarization Layer>

A sheet like (30 cm×21 cm) (meth)acrylic based resin (resin compositionmade of 94 parts by weight of a bis(meth)acrylate including alicycliccore structure and 6 parts by weight of a mono(meth)acrylate includingalicyclic core structure) film (the coefficient of thermal expansion is60 ppm, and the overall optical transmittance is 86%) was disposed in aplasma chemical gas phase deposition (CVD) device as the base material.A gas barrier layer comprising a metal oxide film was deposited byforming a film using a hexamethyl disiloxane (HMDSO) as the materialunder the below-mentioned film forming conditions until the filmthickness became 100 nm.

Film forming pressure: 30 Pa

Hexamethyldisiloxane gas flow rate: 4 sccm

Oxygen gas flow rate: 12 sccm

Herium gas flow rate: 30 sccm

Frequency: 0 kHz

Electric power: 150 W

A planarization layer was formed by coating a coating agent containing acardo polymer as the main agent (V-259-EH: produced by Nippon SteelChemical Co., Ltd.) on the gas barrier layer formed in the process by aspin coating method by a 1.0 μm film thickness, and drying at 120° C.for 2 minutes, and then at 160° C. for 60 minutes by hot air.

Example 4

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer (Sputtering Method)/Planarization Layer>

A sheet like (30 cm×21 cm) (meth) acrylic based resin (resin compositionmade of 94 parts by weight of a bis(meth) acrylate including alicycliccore structure and 6 parts by weight of a mono(meth) acrylate includingalicyclic core structure) film (the coefficient of thermal expansion is60 ppm, and the overall optical transmittance is 86%) was disposed inthe chamber of a magnetron sputtering device as the base material. A gasbarrier layer was deposited on the base material by forming a film usinga silicon nitride as the target under the below-mentioned film formingconditions until the film thickness of the silicon nitride oxide became100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

A planarization layer was formed by coating a coating agent containing acardo polymer as the main agent (V-259-EH: produced by Nippon SteelChemical Co., Ltd.) on the gas barrier layer formed in the process by aspin coating method by a 1.0 μm film thickness, and drying at 120° C.for 2 minutes, and then at 160° C. for 60 minutes by hot air.

Example 5

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer/Planarization Layer/Gas Barrier Layer>

The gas barrier substrate obtained in the example 4 was disposed in thechamber of a magnetron sputtering device. A gas barrier layer wasdeposited by forming a film using a silicon nitride as the target underthe below-mentioned film forming conditions until the film thickness ofthe silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Example 6

<Production of a Gas Barrier Substrate Comprising BaseMaterial/Planarization Layer/Gas Barrier Layer>

A planarization layer was formed on a sheet like (30 cm×21 cm) (meth)acrylic based resin (resin composition made of 94 parts by weight of abis(meth) acrylate including alicyclic core structure and 6 parts byweight of a mono(meth)acrylate including alicyclic core structure) film(the coefficient of thermal expansion is 60 ppm, and the overall opticaltransmittance is 86%) as the base material by coating a coating agentcontaining a cardo polymer as the main agent (V-259-EH: produced byNippon Steel Chemical Co., Ltd.) thereon by a spin coating method by a1.0 μm film thickness, and drying at 120° C. for 2 minutes, and then at160° C. for 60 minutes by hot air. The transparent substrate with theplanarization layer formed by the process was disposed in the chamber ofa magnetron sputtering device. A gas barrier layer was deposited on theplanarization layer by forming a film using a silicon nitride as thetarget under the below-mentioned film forming conditions until the filmthickness of the silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Example 7

<Production of a Gas Barrier Substrate Comprising A Stress ReleasingLayer Provided on the Opposite Surface to the Film Forming Side>

A sheet like (30 cm×21 cm) (meth)acrylic based resin (resin compositionmade of 94 parts by weight of a bis(meth) acrylate including alicycliccore structure and 6 parts by weight of a mono(meth) acrylate includingalicyclic core structure) film (the coefficient of thermal expansion is60 ppm, and the overall optical transmittance is 86%) with a 100 nm filmthickness silicon nitride oxide provided as a stress releasing layerprovided on the opposite side (rear surface) of the film forming surfacewas disposed in the chamber of a magnetron sputtering device as the basematerial. A gas barrier layer was deposited by forming a film using asilicon nitride as the target under the below-mentioned film formingconditions until the film thickness of the silicon nitride oxide became100 nm.

Film forming pressure: 2.5×10−1 Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Next, the film forming surface side (front surface) of the (meth)acrylic based resin film base material was set in the chamber of themagnetron sputtering device. A gas barrier layer was deposited byforming a film using a silicon nitride as the target under thebelow-mentioned film forming conditions until the film thickness of thesilicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10−1 Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

A planarization layer was formed by coating a coating agent containing acardo polymer as the main agent (V-259-EH: produced by Nippon SteelChemical Co., Ltd.) on the gas barrier layer of the film forming surfaceside (front surface) by a spin coating method by a 1.0 μm filmthickness, and drying at 120° C. for 2 minutes, and then at 160° C. for60 minutes by hot air.

Furthermore, the base material with the flattering layer was disposed inthe chamber of the magnetron sputtering device. A gas barrier layer wasdeposited by forming a film using a silicon nitride as the target underthe below-mentioned film forming conditions until the film thickness ofthe silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Example 8

<Production of a Display Substrate>

A sheet like (30 cm×21 cm) (meth) acrylic based resin (resin compositionmade of 94 parts by weight of a bis(meth) acrylate including alicycliccore structure and 6 parts by weight of a mono(meth) acrylate includingalicyclic core structure) film (the coefficient of thermal expansion is60 ppm, and the overall optical transmittance is 86%) was disposed inthe chamber of a magnetron sputtering device as the base material. A gasbarrier layer was deposited by forming a film using a silicon nitride asthe target under the below-mentioned film forming conditions until thefilm thickness of the silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

A planarization layer was formed by coating a coating agent containing acardo polymer as the main agent (V-259-EH: produced by Nippon SteelChemical Co., Ltd.) on the gas barrier layer by a spin coating method bya 1.0 μm film thickness, and drying at 120° C. for 2 minutes, and thenat 160° C. for 60 minutes by hot air.

The gas barrier substrate obtained in the process was disposed in thechamber of the magnetron sputtering device. A gas barrier layer wasdeposited by forming a film using a silicon nitride as the target underthe below-mentioned film forming conditions until the film thickness ofthe silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

The laminated product obtained in the process was disposed in thechamber of the ion plating device. A transparent electrode layer wasformed by forming a film using an indium tin oxide (ITO) as thesublimation material under the below-mentioned film forming conditionsuntil the film thickness of the indium tin oxide (ITO) became 150 nm.

Film forming pressure: 1.5×10⁻¹ Pa

Argon gas flow rate: 18 sccm

Oxygen gas flow rate: 28 sccm

Film forming electric current value: 60 A

Example 9

<Production of an Organic EL Device>

A 6 inch glass was disposed in the chamber of a magnetron sputteringdevice as the base material. A gas barrier layer was deposited byforming a film using a silicon nitride as the target under thebelow-mentioned film forming conditions until the film thickness of thesilicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

A planarization layer was formed by coating a cardo polymer (V-259-EH:produced by Nippon Steel Chemical Co., Ltd.) on the gas barrier layer bya spin coating method by a 1.0 μm film thickness, and drying at 120° C.for 2 minutes, and then at 160° C. for 60 minutes by hot air.

Subsequently, the substrate with the planarization layer was disposed inthe chamber of the magnetron sputtering device. A gas barrier substratewith a gas barrier layer was obtained by forming a film using a siliconnitride as the target under the below-mentioned film forming conditionsuntil the film thickness of the silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

The gas barrier substrate obtained in the process was disposed in thechamber of the ion plating device. A display substrate with atransparent electrode layer was obtained by forming a film using anindium tin oxide (ITO) as the sublimation material under thebelow-mentioned film forming conditions until the film thickness of theindium tin oxide (ITO) became 150 nm.

Film forming pressure: 1.5×10⁻¹ Pa

Argon gas flow rate: 18 sccm

Oxygen gas flow rate: 28 sccm

Film forming electric current value: 60 A

Onto the display substrate produced as mentioned above, an organic ELlight emitting device having a 6 layer configuration comprisingtransparent electrode layer/hole injection layer /hole transportinglayer/organic light emitting layer/electron injection layer/cathode wasformed as follows.

That is, a transparent electrode layer with a stripe pattern of a 0.094mm width, a 0.016 mm gap and a 100 nm film thickness was obtained bycoating a resist agent “OFRP-800” (product name, produced by Tokyo OhkaKogyo Co., Ltd.) onto the transparent electrode layer of an indium tinoxide, and patterning by a photolithography method.

Then, with the display substrate having the transparent electrode layermounted in a resistance heating deposition device, a hole injectionlayer, a hole transporting layer, an organic light emitting layer and anelectron injection layer were formed on the entire surface successivelywhile maintaining a vacuum. When the film is formed, the vacuum vesselinternal pressure was reduced to 1×10⁻⁴ Pa. As the hole injection layer,a copper phthalocyanine (CuPc) was laminated until the film thicknessbecame 100 nm. As the hole transporting layer, a 4,4′-bis[N-(1-naphthyl)-N-phenyl amino]biphenyl (α-NPD) was laminated until thefilm thickness became 20 nm. As the organic light emitting layer, a4,4′-bis(2,2′-diphenylvinyl) biphenyl (DPVBi) was laminated until thefilm thickness became 30 nm. As the electron injection layer, analuminum chelate (tris(8-hydroxy quinoline) aluminum complex, Alq) waslaminated until the film thickness became 20 nm.

Next, while maintaining a vacuum, a 200 nm thickness cathode comprisingan Mg/Ag (mass ratio 10/1) layer was formed using a mask for obtaining a0.30 mm width and 0.03 mm interval pattern orthogonal to the stripepattern of an anode (transparent electrode layer). A color organic ELdevice was obtained by placing the organic EL light emitting deviceunder a dry nitrogen atmosphere (oxygen and water content concentrationsboth are 10 ppm or less) in a glove box, and sealing it with the gasbarrier substrate produced in the example 7 by using a UV hardeningadhesive.

After driving the obtained color organic EL device continuously for 100hours, the number of dark spots per unit area in the panel was measured.

Example 10

<Production of an Organic EL Device>

A supporting substrate was obtained by coating a (meth) acrylic basedresin (resin composition made of 94 parts by weight of a bis(meth)acrylate including alicyclic core structure and 6 parts by weight of amono(meth) acrylate including alicyclic core structure) on a 6 inchglass by a spin coating method by a 1.0 μm film thickness, drying at120° C. for 2 minutes by a hot plate, irradiating a UV by a 1 J/cm², anddrying at 160° C. for 60 minutes by hot air.

The supporting substrate obtained in the previous process was disposedin the chamber of a magnetron sputtering device. A gas barrier layer wasdeposited by forming a film using a silicon nitride as the target underthe below-mentioned film forming conditions until the film thickness ofthe silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

A planarization layer was formed by coating a cardo polymer (V-259-EH:produced by Nippon Steel Chemical Co., Ltd.) on the gas barrier layer bya spin coating method by a 1.0 pm film thickness, and drying at 120° C.for 2 minutes, and then at 160° C. for 60 minutes by hot air.

The substrate with the planarization layer was disposed in the chamberof the magnetron sputtering device. A gas barrier layer was deposited byforming a film using a silicon nitride as the target under thebelow-mentioned film forming conditions until the film thickness of thesilicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Thereafter, the substrate was disposed in the chamber of the ion platingdevice. A transparent electrode layer was formed by forming a film usingan indium t in oxide (ITO) as the sublimation material under thebelow-mentioned film forming conditions until the film thickness of theindium tin oxide (ITO) became 150 nm.

Film forming pressure: 1.5×10⁻¹ Pa

Argon gas flow rate: 18 sccm

Oxygen gas flow rate: 28 sccm

Film forming electric current value: 60 A

Onto the substrate having a transparent electrode layer produced asmentioned above, an organic EL light emitting device having a 6 layerconfiguration comprising transparent electrode layer/hole injectionlayer/hole transporting layer/organic light emitting layer/electroninjection layer/cathode was formed by successively forming a holeinjection layer, a hole transporting layer, an organic light emittinglayer, an electron injection layer and a cathode as follows.

That is, a transparent electrode layer with a stripe pattern of a 0.094mm width, a 0.016 mm gap and a 100 nm film thickness formed was obtainedby coating a resist agent “OFRP-800” (product name, produced by TokyoOhka Kogyo Co., Ltd.) onto the transparent electrode layer of an indiumtin oxide obtained in the process, and patterning by a photolithographymethod.

With the substrate having the transparent electrode layer mounted in aresistance heating deposition device, a hole injection layer, a holetransporting layer, an organic light emitting layer and an electroninjection layer were formed on the entire surface successively whilemaintaining a vacuum. When the film is formed, the vacuum vesselinternal pressure was reduced to 1×10⁻⁴ Pa. As the hole injection layer,a copper phthalocyanine (CuPc) was laminated until the film thicknessbecame 100 nm. As the hole transporting layer, a 4,4′-bis [N-b1-naphthyl)-N-phenyl amino]biphenyl (α-NPD) was laminated until the filmthickness became 20 nm. As the organic light emitting layer, a4,4′-bis(2,2′-diphenylvinyl) biphenyl (DPVBi) was laminated until thefilm thickness became 30 nm. As the electron injection layer, analuminum chelate (tris(8-hydroxyquinoline) aluminum complex, Alq) waslaminated until the film thickness became 20 nm.

Next, while maintaining a vacuum, a 200 nm thickness cathode comprisingan Mg/Ag (mass ratio 10/1) layer was formed using a mask for obtaining a0.30 mm width and 0.03 mm interval pattern orthogonal to the stripepattern of an anode (transparent electrode layer). A color organic ELdevice was obtained by placing the organic EL light emitting deviceunder a dry nitrogen atmosphere (oxygen and water content concentrationsboth are 10 ppm or less) in a glove box, and sealing it with the gasbarrier substrate produced in the example 7 by using a UV hardeningadhesive.

After driving the obtained color organic EL device continuously for 100hours, the number of dark spots per unit area in the panel was measured.

Comparative Example 1

<Production of a Gas Barrier Substrate Comprising BaseMaterial/Transparent Resin Layer/Gas Barrier Layer>

A gas barrier substrate of the comparative example 1 was obtained in thesame manner as the example 1 except that the planarization layer was notformed in the production of the gas barrier substrate of the example 1.

Comparative Example 2

<Production of a Gas Barrier Substrate Comprising BaseMaterial/Transparent Resin Layer/Gas Barrier Layer>

A gas barrier substrate of the comparative example 2 was obtained in thesame manner as in the example 2 except that the planarization layer wasnot formed in the production of the gas barrier substrate of the example2.

Comparative Example 3

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer (CVD Method)>

A gas barrier substrate of the comparative example 3 was obtained in thesame manner as in the example 3 except that the planarization layer wasnot formed in the production of the gas barrier substrate of the example3.

Comparative Example 4

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer (Sputtering Method)>

A gas barrier substrate of the comparative example 4 was obtained in thesame manner as in the example 4 except that the planarization layer wasnot formed in the production of the gas barrier substrate of the example4.

Comparative Example 5

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer/Gas Barrier Layer>

A gas barrier substrate of the comparative example 5 was obtained in thesame manner as in the example 5 except that the planarization layer wasnot formed in the production of the gas barrier substrate of the example5. That is, the gas barrier substrate of the comparative example 5 is agas barrier substrate comprising a gas barrier layer of a siliconnitride oxide formed by two layers in the same conditions on the basematerial.

Comparative Example 6

<Production of a Gas Barrier Substrate with a Stress Releasing LayerProvided on the Opposite Surface to the Film Forming Side>

A gas barrier substrate of the comparative example 6 was obtained in thesame manner as in the example 7 except that the planarization layer wasnot formed in the production of the gas barrier substrate of the example6. That is, the layer configuration of the gas barrier substrateobtained in the comparative example 6 comprises a stress releasing layercomprises a gas barrier layer/a base material/a gas barrier layer/a gasbarrier layer.

Comparative Example 7

<Display Substrate>

A gas barrier substrate of the comparative example 7 was obtained in thesame manner as in the example 8 except that the planarization layer wasnot formed in the production of the gas barrier substrate of the example7. That is, the layer configuration of the display substrate obtained inthe comparative example 7 comprises a base material/a gas barrierlayer/a gas barrier layer/a transparent electrode layer.

Comparative Example 8

<Production of a Gas Barrier Substrate Comprising Base Material/GasBarrier Layer/Planarization Layer>

A gas barrier layer was deposited on the base material in the samemanner as in the example 8.

A planarization layer was formed by coating a coating agent containingan amino alkyldialkoxysilane as the main agent on the gas barrier layerby a spin coating method by a 1.0 μm film thickness, and drying at 120°C. for 2 minutes, and then at 200° C. for 2 hours by hot air.

Comparative Example 9

<Production of an Organic EL Device>

A 6 inch glass was disposed in the chamber of a magnetron sputteringdevice as the base material. A gas barrier layer was deposited byforming a film using a silicon nitride as the target under thebelow-mentioned film forming conditions until the film thickness of thesilicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 3 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

The base material with the gas barrier layer was disposed in the chamberof the magnetron sputtering device. A gas barrier substrate with a gasbarrier layer formed was obtained by forming a film using a siliconnitride as the target under the below-mentioned film forming conditionsuntil the film thickness of the silicon nitride oxide became 100 nm.

Film forming pressure: 1.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Film forming electric current value: 100 A

A display substrate was obtained by forming a transparent electrodelayer on the gas barrier substrate obtained in the process in the samemanner as in the example 9.

A color organic EL device was obtained by forming an organic EL lightemitting device having a 6 layer configuration comprising transparentelectrode layer/hole injection layer/hole transporting layer/organiclight emitting layer/electron injection layer/cathode onto the displaysubstrate obtained in the process in the same manner as in theabove-mentioned example 9, forming a cathode and sealing.

After driving the obtained color organic EL device continuously for 100hours, the number of dark spots per unit area in the panel was measured.

Comparative Example 10

<Production of an Organic EL Device>

A transparent supporting substrate was prepared as follows. That is, atransparent supporting substrate was obtained by coating a (meth)acrylic based resin film on a 6 inch glass by a spin coating method by a1.0 μm film thickness, drying at 120° C. for 2 minutes by a hot plate,irradiating an ultraviolet ray (UV) by a 1 J/cm², and drying at 160° C.for 60 minutes by hot air.

The transparent supporting substrate obtained in the process wasdisposed in the chamber of a magnetron sputtering device. A gas barrierlayer was deposited on the transparent supporting substrate by forming afilm using a silicon nitride as the target under the below-mentionedfilm forming conditions until the film thickness of the silicon nitrideoxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

The substrate with the gas barrier layer was disposed in the chamber ofthe magnetron sputtering device. A gas barrier substrate with a gasbarrier layer was obtained by forming a film using a silicon nitride asthe target under the below-mentioned film forming conditions until thefilm thickness of the silicon nitride oxide became 100 nmn.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Oxygen gas flow rate: 3 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

The gas barrier substrate was disposed in the chamber of the ion platingdevice. A display substrate was obtained by forming a transparentelectrode layer by forming a film using an indium tin oxide (ITO) as thesublimation material under the below-mentioned film forming conditionsuntil the film thickness of the indium tin oxide (ITO) became 150 nm.

Film forming pressure: 1.5×10⁻¹ Pa

Argon gas flow rate: 18 sccm

Oxygen gas flow rate: 28 sccm

Film forming electric current value: 60 A

Onto the display substrate produced as mentioned above, an organic ELlight emitting device having a 6 layer configuration comprisingtransparent electrode layer/hole injection layer/hole transportinglayer/organic light emitting layer/electron injection layer/cathode wasformed as follows.

That is, a transparent electrode layer with a stripe pattern of a 0.094mm width, a 0.016 mm gap and a 100 nm film thickness formed was obtainedby coating a resist agent “OFRP-800” (product name, produced by TokyoOhka Kogyo Co., Ltd.) onto the transparent electrode layer of an indiumtin oxide, and patterning by a photolithography method.

With the substrate having the transparent electrode layer formed mountedin a resistance heating deposition device, a hole injection layer, ahole transporting layer, an organic light emitting layer and an electroninjection layer were faulted on the entire surface successively whilemaintaining a vacuum. When the film is formed, the vacuum vesselinternal pressure was reduced to 1×10⁻⁴ Pa. As the hole injection layer,a copper phthalocyanine (CuPc) was laminated until the film thicknessbecame 100 nm. As the hole transporting layer, a 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (α-NPD) was laminated until thefilm thickness became 20 nm. As the organic light emitting layer, a4,4′-bis(2,2′-diphenylvinyl) biphenyl (DPVBi) was laminated until thefilm thickness became 30 nm. As the electron injection layer, analuminum chelate (tris(8-hydroxyquinoline) aluminum complex, Alq) waslaminated until the film thickness became 20 nm.

Next, while maintaining a vacuum, a 200 nm thickness cathode comprisingan Mg/Ag (mass ratio 10/1) layer was formed using a mask for obtaining a0.30 mm width and 0.03 mm interval pattern orthogonal to the stripepattern of an anode (transparent electrode layer). A color organic ELdevice was obtained by placing the organic EL light emitting deviceunder a dry nitrogen atmosphere (oxygen and water content concentrationsboth are 10 ppm or less) in a glove box, and sealing it with the gasbarrier substrate produced in the example 7 by using UV hardeningadhesive.

After driving the obtained color organic EL device continuously for 100hours, the number of dark spots per unit area in the panel was measured.

[Evaluation Method]

For the gas barrier substrates and the display substrates produced inthe examples 1 to 10 and comparative examples 1 to 10, tests wereexecuted for the evaluation items shown below and the data weremeasured.

(1) Measurement of the Water Vapor Transmission Rate

It was measured by a water vapor transmission rate measuring device(produced by MOCON, PERMATRAN-W 3/31: product name) under the conditionsof the measurement temperature 37.8° C., and the humidity 100% Rh.

(2) Measurement of the Oxygen Transmission Rate

It was measured by an oxygen gas transmission rate measuring device(produced by MOCON, OX-TRAN 2/20: product name) under the conditions ofthe measurement temperature 23° C., and the humidity 90% Rh.

(3) Measurement of the Average Surface Roughness (Ra) and the MaximumHeight Difference of Surface (Peak to Valley)

They were measured by (Nanopics: product name, produced by SeikoInstruments Inc.) under the conditions of a 20 μm of scanning range anda 90 sec/frame of scanning speed.

(4) Measurement of the Sheet Resistance Value

It was measured by a surface electric resistance measuring device(LORESTA AP: product name, produced by Mitsubishi Yuka Corp.) by a fourprobe method.

(5) Measurement of the Coefficient of Thermal Expansion

The coefficient of thermal expansion was measured at 25 to 200° C. usingTMA 8310 (product name) produced by Rigaku Corporation.

(6) Measurement of the Overall Optical Transmittance

The overall optical transmittance was measured by an overall opticaltransmittance device (COLOUR S&M COMPUTER MODEL SM-C: model number)produced by Suga Test Instruments Co., Ltd.

The above-mentioned evaluation results (measurement results) are shownin the following Table 1. TABLE 1 Maximum height Oxygen difference ofWater vapor transmission Average surface surface (peak to Overalloptical Sheet resistance transmission rate rate roughness (Ra) valley)transmittance value Dark spot (g/m²/day) (cc/m²/day · atm) (nm) (nm) (%)(Σ/□) (piece) Example 1 0.08 0.08 0.5 5 88 — — Example 2 0.07 0.09 0.6 687 — — Example 3 0.06 0.07 0.6 5 88 — — Example 4 0.02 0.05 0.5 5 88 — —Example 5 0.001 0.003 2 25 85 — — Example 6 0.001 0.004 1.5 18 80 — —Example 7 0.0005 0.002 1.9 22 80 — — Example 8 0.005 0.007 1.1 10 80 10— Example 9 — — — — — — 0.45 ± 0.2 Example 10 — — — — — — 0.61 ± 0.3Comparative example 1 1.0 1.4 6.5 70 85 — Comparative example 2 0.8 0.97.8 80 88 — Comparative example 3 0.9 0.6 6.1 70 88 — Comparativeexample 4 0.5 0.5 6.1 72 85 — — Comparative example 5 0.4 0.5 8.2 100 75— — Comparative example 6 0.04 0.3 8.3 95 75 — Comparative example 7 0.20.2 10 110 80 35 Comparative example 8 1 0.8 6.3 72 80 — — Comparativeexample 9 — — — — — —  3.1 ± 0.3 Comparative example 10 — — — — — —  3.4± 0.2

Example 11

<Formation of a Blue Color Filter Layer>

As a transparent substrate, a sheet like (30 cm×21 cm) (meth) acrylicbased resin film having a 60 ppm of coefficient of thermal expansion, a85% of overall optical transmittance and a 200 :m of thickness was used.The (meth) acrylic based resin film was produced by forming a resincomposition made of 94 parts by weight of a bis(meth) acrylate includingalicyclic core structure and 6 parts by weight of a mono(meth) acrylateincluding alicyclic core structure.

A blue filter material (color mosaic CB-7001: product name, produced byFuji Hunt Electronics Technology Co., Ltd.) was coated onto the (meth)acrylic based resin film by a spin, coating method. A blue color filterlayer having a 0.1 mm line width, a 0.33 mm pitches (cycle) and a 6 :mfilm thickness stripe pattern was formed by patterning the coating filmby a photolithography method.

<Formation of a Green Color Conversion Layer>

As a fluorescent pigment, a coumarin 6 (0.7 part by weight) wasdissolved in 120 parts by weight of a propyleneglycolmonoethyl acetate(PEGMA) as the solvent. A coating solution was obtained by adding, intothe solution, 100 parts by weight of (V-259PA/PH5: product name,produced by Nippon Steel Chemical Co., Ltd.) as the photopolymerizableresin.

A green color conversion layer having a 0.1 mm line width, a 0.33 mmpitch (cycle) and a 10 :m film thickness stripe pattern was formed bycoating the coating solution prepared as mentioned above onto thetransparent base material having the blue color filter layer obtained inthe process, and patterning by a photolithography method.

<Formation of a Red Color Conversion Layer>

As a fluorescent pigment, a coumarin 6 (0.6 part by weight), a rhodamine6G (0.3 part by weight) and basic violet 11 (0.3 part by weight) weredissolved in 120 parts by weight of a propyleneglycolmonoethyl acetate(PEGMA) as the solvent. A coating solution was obtained by adding, intothe solution, 100 parts by weight of a photopolymerizable resin(V-259PA/PH5: product name, produced by Nippon Steel Chemical Co.,Ltd.).

A red color conversion layer having a 0.1 mm line width, a 0.33 mm pitch(cycle) and a 10 :m film thickness stripe pattern was formed by coatingthe coating solution prepared as mentioned above onto the transparentbase material having the blue color filter layer and the green colorconversion layer, and patterning by a photolithography method.

The color conversion layers were formed with the line patterns of thered color conversion layer, the green color conversion layer and theblue color filter layer formed as mentioned above disposed parallel witha 0.01 mm gap width.

<Formation of an Overcoat Layer>

Next, an overcoat layer was formed on the color conversion layer formedin the process by coating an acrylic based resin (V-259PA/PH5: productname, produced by Nippon Steel Chemical Co., Ltd.) by a spin coatingmethod, and irradiating an ultraviolet ray (300 mJ/cm²) for hardening.The overcoat layer has 8 :m thickness on each color conversion layer.

<Formation of a Gas Barrier Layer>

The substrate having the overcoat layer obtained in the process wasdisposed in the chamber of a magnetron sputtering device. A film wasdeposited using a silicon nitride as the target under thebelow-mentioned film forming conditions until the film thickness of thesilicon nitride oxide became 100 nm. Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

<Formation of a Flattering Layer>

A resin made of a cardo polymer having a fluorene skeleton (V-259-EH:produced by Nippon Steel Chemical Co., Ltd.) was coated on the gasbarrier layer by a spin coating method, and was heated at 160° C. for 1hour. Thereby, an organic EL device substrate with a planarization layerformed was obtained. The above-mentioned planarization layer has a 1 :mthickness on the gas barrier layer. The gas barrier layer of theovercoat layer was not deformed, and the upper surface of theplanarization layer has a 0.8 nm of surface roughness Ra and 8 nm ofmaximum height difference of surface (peak to valley).

<Production of an Organic EL Color Display>

Onto the organic EL device substrate produced as mentioned above, anorganic EL light emitting device having a 6 layer configurationcomprising transparent electrode layer/hole injection layer/holetransporting layer/organic light emitting layer/electron injectionlayer/cathode was formed as follows.

A transparent electrode (indium zinc oxide) was formed on the entiresurface of the organic EL device substrate by a sputtering method. Atransparent electrode layer with a stripe pattern of a 0.094 mm width, a0.016 mm gap and a 100 nm film thickness formed at a positioncorresponding to the color conversion layers of each color was formed bycoating a resist agent “OFRP-800” (product name, produced by Tokyo OhkaKogyo Co., Ltd.) onto the indium zinc oxide, and patterning by aphotolithography method.

Then, with the organic EL device substrate having the transparentelectrode layer mounted in a resistance heating deposition device, ahole injection layer, a hole transporting layer, an organic lightemitting layer and an electron injection layer were formed on the entiresurface successively while maintaining a vacuum. When the film isformed, the vacuum vessel internal pressure was reduced to 1×10⁻⁴ Pa. Asthe hole injection layer, a copperphthalocyanine (CuPc) was laminateduntil the film thickness became 100 nm. Moreover, as the holetransporting layer, a4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(∀-NPD) was laminateduntil the film thickness became 20 nm. As the organic light emittinglayer, a 4,4′-bis(2,2′-diphenylvinyl)biphenyl (DPVBi) was laminateduntil the film thickness became 30 nm. As the electron injection layer,an aluminum chelate (tris(8-hydroxyquinoline) aluminum complex, Alq) waslaminated until the film thickness became 20 nm.

Next, while maintaining a vacuum, a 200 nm thickness cathode comprisingan Mg/Ag (mass ratio 10/1) layer was formed using a mask for obtaining a0.30 mm width and 0.03 mm interval pattern orthogonal to the stripepattern of an anode (transparent electrode layer). A color organic ELdevice was obtained by placing the organic EL light emitting deviceobtained accordingly under a dry nitrogen atmosphere (oxygen and watercontent concentrations both are 10 ppm or less) in a glove box, andsealing it with a sealing glass by using a UV hardening adhesive.

After driving the obtained color organic EL device continuously for 100hours, the number of dark spots per unit area in the panel was measured.The results are shown in the following Table 2.

Example 12

It was executed in the same manner as in the example 11 except that thetransparent base material was changed to the following.

A transparent base material was obtained by coating a (meth)acrylicbased resin [resin composition made of 94 parts by weight of abis(meth)acrylate including alicyclic core structure and 6 parts byweight of a mono(meth)acrylate including alicyclic core structure] on a200:m thickness sheet like (30 cm×21 cm) polycarbonate resin film by aspin coating method by a 1.0 :m film thickness, drying at 120° C. for 2minutes by a hot plate, irradiating a UV by a 1 J/cm², and drying at160° C. for 60 minutes by hot air. The coefficient of thermal expansionwas 63 ppm, and the overall optical transmittance was 89%.

Example 13

It was executed in the same manner as in the example 11 except that thetransparent base material was changed to the following.

A transparent base material was obtained by coating a (meth)acrylicbased resin [resin composition made of 94 parts by weight of abis(meth)acrylate including alicyclic core structure and 6 parts byweight of a mono(meth) acrylate including alicyclic core structure] on a6 inch square glass having a 0.7 mm thickness and a 87% of overalloptical transmittance by a spin coating method by a 1.0:m filmthickness, drying at 120° C. for 2 minutes by a hot plate, irradiating aUV by a 1 J/cm², and drying at 160° C. for 60 minutes by hot air. Thecoefficient of thermal expansion was 62 ppm, and the overall opticaltransmittance was 88%.

Example 14

It was executed in the same manner as in the example 11 except that thetransparent base material was change to the following.

A 6 inch square glass substrate having a 0.7 mm thickness and 87% ofoverall optical transmittance was prepared and used as the transparentbase material.

Example 15

It was executed in the same manner as in the example 11 except that thegas barrier layer was deposited by the following method.

<Formation of a Gas Barrier Layer>

The substrate with the overcoat layer was disposed in the chamber of theion plating device. A film was deposited using a silicon oxide as thesublimation material under the below-mentioned film forming conditionsuntil the film thickness of the silicon nitride oxide became 100 nm.

Film forming pressure: 1.5×10⁻¹ Pa

Argon gas flow rate: 18 sccm

Oxygen gas flow rate: 28 sccm

Film forming electric current value: 60 A

Example 16

It was executed in the same manner as in the example 11 except that thegas barrier layer was deposited by the following method.

<Formation of a Gas Barrier Layer>

The substrate with the overcoat layer was disposed in a plasma enhancedchemical gas phase deposition device. A film was deposited using atetramethoxysilane (TMOS) as the material under the below-mentioned filmforming conditions until the film thickness became 100 nm.

Film forming pressure: 30 Pa

Tetramethoxysilane gas flow rate: 4 sccm

Oxygen gas flow rate: 12 sccm

Helium gas: 30 sccm

Frequency: 90 KHz

Electric power: 150 W

Example 17

It was executed in the same manner as in the example 11 except that agas barrier layer was deposited on the planarization layer by thefollowing method.

<Formation of a Gas Barrier Layer>

The substrate with the overcoat layer was disposed in the chamber of amagnetron sputtering device. A film was deposited using a siliconnitride as the target under the below-mentioned film forming conditionsuntil the film thickness of the silicon nitride oxide became 100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Example 18

It was executed in the same manner as in the example 11 except that astress releasing layer was formed on the transparent base material.

<Formation of a Stress Releasing Layer>

The below-mentioned gas barrier layer was deposited on the opposite side(rear surface) of the film forming surface of a transparent basematerial as a stress releasing and degassing preventing layer. That is,a sheet like (30 cm×21 cm) (meth) acrylic based resin film provided witha 100 nm film thickness silicon nitride oxide was disposed in thechamber of a magnetron sputtering device. A film was deposited using asilicon nitride as the target under the below-mentioned film formingconditions until the film thickness of the silicon nitride oxide became100 nm.

Film forming pressure: 2.5×10⁻¹ Pa

Argon gas flow rate: 20 sccm

Nitrogen gas flow rate: 9 sccm

Frequency: 13.56 MHz

Electric power: 1.2 kW

Comparative Example 11

It was executed in the same manner as in the example 11 except that theplanarization layer was not formed.

Comparative Example 12

It was executed in the same manner as in the example 12 except that theplanarization layer was not formed.

Comparative Example 13

It was executed in the same manner as in the example 13 except that theplanarization layer was not formed.

Comparative Example 14

It was executed in the same manner as in the example 14 except that theplanarization layer was not formed.

Comparative Example 15

It was executed in the same manner as in the example 15 except that theplanarization layer was not formed.

Comparative Example 16

It was executed in the same manner as in the example 16 except that theplanarization layer was not formed.

Comparative Example 17

It was executed in the same manner as in the example 17 except that theplanarization layer was not formed.

Comparative Example 18

It was executed in the same manner as in the example 18 except that theplanarization layer was not formed.

[Evaluation Method]

The organic EL device s obtained in the examples 11 to 18 and thecomparative examples 11 to 18 were evaluated as follows. The organic ELdevices were driven by line sequential scanning at a 60 Hz drivingfrequency, a 1/60 duty ratio and a 2 mA electric current amount perpixel. After driving the same for 100 hours continuously, the numbers ofdark spots per unit area in the panels were compared. TABLE 2 Dark spot(piece) Example 11 0.45 ± 0.2 Example 12 0.47 ± 0.2 Example 13 0.46 ±0.2 Example 14 0.49 ± 0.2 Example 15 0.52 ± 0.2 Example 16 0.51 ± 0.2Example 17 0.45 ± 0.2 Example 18 0.51 ± 02  Comparative example 11  3.3± 0.3 Comparative example 12  3.1 ± 0.3 Comparative example 13  4.2 ±0.3 Comparative example 14  3.1 ± 0.3 Comparative example 15  3.3 ± 0.3Comparative example 16  3.1 ± 0.3 Comparative example 17  3.2 ± 03 Comparative example 18  3.1 ± 0.3

According to the Table 2, it was learned that generation and growth ofthe dark spots can be restrained by providing the planarization layer.As the dark spots, those having a 0.1 to 2 mm diameter were measured,and those having 2 mm or more were eliminated form the measurementsubject as a defect matter.

1. A gas barrier substrate having a base material, a planarization layerformed on the base material, and a gas barrier layer comprising adeposition film formed on the planarization layer, wherein theplanarization layer has a cardo polymer.
 2. The gas barrier substrateaccording to claim 1, wherein the base material is made of a heatresistant transparent resin having 80 ppm or less of coefficient ofthermal expansion in the range from a room temperature to 150° C., and85% or more of overall optical transmittance.
 3. The gas barriersubstrate according to claim 1, wherein the base material has a heatresistant transparent resin layer having 80 ppm or less of coefficientof thermal expansion in the range from a room temperature to 150° C. anda 85% or more of overall optical transmittance on the surface.
 4. Thegas barrier substrate according to claim 1, wherein the average surfaceroughness of the planarization layer is 6 nm or less, and the maximumheight difference of surface (peak to valley) is 60 nm or less.
 5. Thegas barrier substrate according to claim 1, wherein the gas barrierlayer is a deposition film comprising a transparent inorganic oxidefilm, a transparent inorganic oxide nitride film, a transparentinorganic nitride film or a transparent metal film.
 6. The gas barriersubstrate according to claim 1, wherein the oxygen transmission rate inthe gas barrier substrate is 0.3 cc/m²/day·atm or less and the watervapor transmission rate is 0.1 g/m²/day or less.
 7. The gas barriersubstrate according to claim 1, wherein the average surface roughness ofthe gas barrier substrate is 6 nm or less, and the maximum heightdifference of surface (peak to valley) is 60 nm or less.
 8. The gasbarrier substrate according to claim 1, wherein a stress releasing layerfor releasing the stress applied on the base material is formed on theopposite surface where the gas barrier layer and the planarization layerare formed.
 9. A gas barrier substrate having a base material, a gasbarrier layer comprising a deposition film formed on the base material,and a planarization layer, having a cardo polymer, formed on the gasbarrier layer.
 10. The gas barrier substrate according to claim 10,wherein the gas barrier layer is formed on the planarization layer. 11.The gas barrier substrate according to claim 10, wherein the gas barrierlayer is a deposition film comprising a transparent inorganic oxidefilm, a transparent inorganic oxide nitride film, a transparentinorganic nitride film or a transparent metal film.
 12. A displaysubstrate comprising a transparent electrode layer formed on the gasbarrier substrate according to claim 1.